Observation of ballistic-diffusive thermal transport in GaN transistors using thermoreflectance thermal imaging AITranslate

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Chinese Library Classification Number:TQ133.51[化学工程—无机化工];TN386[电子电信—物理电子学]

Citation Information:

To develop effective thermal management strategies for gallium-nitride (GaN) transistors, it is essential to accurately predict the device junction temperature. Since the width of the heat generation in the devices is comparable to phonon mean free paths (MFPs) of GaN, phonon ballistic transport exists and can significantly affect the heat transport process.