Layer- and temperature-dependent work function modulation in CrSBr AITranslate

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Basic Information:

DOI：10.23919/CHAIN.2025.000013

Chinese Library Classification Number:

Citation Information:

Two-dimensional (2D) magnetic semiconductors have emerged as promising materials for next-generation nanoelectronic and spintronic devices, owing to their unique coupling of electronic and magnetic properties. CrSBr, a quasi-2D magnetic semiconductor, offers a versatile platform for exploring coupled electronic and magnetic phenomena in low-dimensional systems. Here, we systematically investigate the surface work function of CrSBr nanosheets using scanning Kelvin probe microscopy (SKPM), revealing a nonlinear dependence on thickness and a thermally tunable, reversible behavior. Furthermore, a CrSBr-based 2D field-effect transistor (FET) demonstrates that such thermal modulation of the work function effectively alters the Schottky barrier height, directly impacting charge injection. Density functional theory (DFT) calculations reveal the layer- and magnetism-dependent nature of the work function in few-layer CrSBr. This work highlights the importance of work function engineering in CrSBr and provides a foundation for its application in magnetoelectric coupling, spintronic devices, and van der Waals electronics.