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DFT calculation of the electronic properties and EEL spectrum of NiSi2 AITranslate

Universidad de Sonora; Universidad Nacional Autónoma de México; Universidad Nacional Autónoma de México; Universidad de Sonora
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Publisher: Elsevier
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Abstract AITranslate

Electronic structure and optical properties calculations of NiSi2 were carried out using the Full-Potential Linearized Augmented Plane Waves (FLAPW) method, within the Density Functional Theory (DFT) with the Local Density Approximation (LDA). Band structure and total and projected density of states (DOS) are calculated as well as the theoretical Electron Energy-Loss (EEL) Spectrum, utilizing experimental lattice parameters. Our theoretical EELS results are in agreement with recent experimental findings, indicating that the main peak corresponds to a plasmon. Additional peaks in our calculations are identified as interband transitions (at 2.67 eV, 4.77 eV and 6.1 eV) associated to transitions between Ni d and Si p states, and low magnitude plasmons (at 1.3 eV and 4.02 eV).

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DOI:https://doi.org/10.1016/j.commatsci.2010.03.051

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Citation Information:

Electronic structure and optical properties calculations of NiSi2 were carried out using the Full-Potential Linearized Augmented Plane Waves (FLAPW) method, within the Density Functional Theory (DFT) with the Local Density Approximation (LDA). Band structure and total and projected density of states (DOS) are calculated as well as the theoretical Electron Energy-Loss (EEL) Spectrum, utilizing experimental lattice parameters. Our theoretical EELS results are in agreement with recent experimental findings, indicating that the main peak corresponds to a plasmon. Additional peaks in our calculations are identified as interband transitions (at 2.67 eV, 4.77 eV and 6.1 eV) associated to transitions between Ni d and Si p states, and low magnitude plasmons (at 1.3 eV and 4.02 eV).

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GB/T 7714-2015 [1] Roberto NúñezGonzález, Armando ReyesSerrato, Donald H. Galván, et al. Computational Materials Science, 2010(49). DOI:10.1016/j.commatsci.2010.03.051.
MLA [1] Roberto NúñezGonzález, et al., Computational Materials Science, no. 49, 2010, https://doi.org/10.1016/j.commatsci.2010.03.051.
APA [1] Roberto NúñezGonzález, Armando ReyesSerrato, Donald H. Galván, & Alvaro PosadaAmarillas. (2010). Computational Materials Science(49). https://doi.org/10.1016/j.commatsci.2010.03.051
IEEE [1] Roberto NúñezGonzález, Armando ReyesSerrato, Donald H. Galván, and Alvaro PosadaAmarillas, Computational Materials Science, no. 49, 2010, doi: 10.1016/j.commatsci.2010.03.051.