Single-Crystal Sb2S3 Tube Prepared by Chemical Vapor Deposition for a 1 cm Photodetector Application Single-Crystal Sb2S3 Tube Prepared by Chemical Vapor Deposition for a 1 cm Photodetector Application AITranslate

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DOI：https://doi.org/10.1021/acsaelm.2c00233

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The V–VI group sulfide, Sb2S3, has been widely studied in the application of optoelectronic components because of its distinctive one-dimensional structure and remarkable optoelectronic properties. Low-dimensional semiconductor materials have attracted widespread interest among scientists because they offer more advantages than their bulk or powder forms for optoelectronic applications. In this work, we report the preparation of centimeter-scale length (0.5–2.2 cm) single-crystal Sb2S3 tubes by chemical vapor deposition (CVD). A photodetector based on a single Sb2S3 tube has a promising optical response over the spectral range of about 450 to 808 nm. The best photoresponse was measured by laser irradiation at a wavelength of 808 nm, and a high current switching ratio of about 200 was obtained with fast rise/decay times of 22 and 24 ms, respectively. Moreover, the Sb2S3 tube-based device exhibited excellent switching cycle stability, which is beneficial for practical applications. These encouraging results facilitate the potential applications of Sb2S3 tube-based optoelectronic and semiconductor devices.