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Photonic Cured Metal Oxides for Low-Cost, High-Performance, Low-Voltage, Flexible, and Transparent Thin-Film Transistors Photonic Cured Metal Oxides for Low-Cost, High-Performance, Low-Voltage, Flexible, and Transparent Thin-Film Transistors AITranslate

Institute of Technology Bombay; Institute of Technology Bombay; Institute of Technology Bombay; Institute of Technology Bombay; Institute of Technology Bombay
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Publisher: ACS
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Abstract AITranslate

Flash light-based photonic curing has recently emerged as a promising technique for low-cost and ultrafast production of flexible electronics. In this work, we demonstrate photonic curing-based low-cost fabrication of ZrO2-based high-k dielectric and ZnO-based semiconducting layers for low-voltage, high-performance, flexible, and transparent thin-film transistors (TFTs). Such metal oxide-based devices are extremely important to realize next-generation technologies with high power efficiency, optical transparency,mecahnical flexibility, high reliability, and environmental stability. In the current work, photonic cured ZrO2 and ZnO layers were obtained by exposing their spin-coated precursor solutions to the high-energy pulsed light of a xenon flash lamp. The numbers of applied pulses were varied for optimization. Hence, the optimally cured ZrO2 film exhibited excellent dielectric property with high areal capacitance of ∼485 nFcm–2, low leakage current density of 10–4 A cm–2, and high breakdown strength of ∼2.3 MV cm–1 which further enabled the low-voltage operation (< 3 V) for the fabricated TFTs. On the other hand, the optimally cured ZnO layer resulted in the high performance for the TFTs with field-effect mobility of 3.4 ± 0.1 cm2 V–1 s–1, on–off ratio of 3.3 ± 0.8 × 105, and threshold voltage of 0.8 ± 0.03 V. The mechanical flexibility of these devices was demonstrated by showing their operational stability under mechancial bending and after continuous bending cycles. These devices also exhibited optical transparency up to 80% in the visible wavelength range. To explain the behavior of these photonic cured layers and devices under different process conditions, several microscopic and spectroscopic studies were performed. Finally, the ultraviolet–visible absorption spectroscopy and a finite element simulation study also showed the viability of photonic curing to successfully fabricate solution-derived ZnO and ZrO2 layers on a flexible substrate.

KeyWords AITranslate

photonic curing metal oxides highk dielectric thinfilm transistor flexible electronics
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Basic Information:

DOI:https://doi.org/10.1021/acsaelm.2c00229

Chinese Library Classification Number:

Citation Information:

Flash light-based photonic curing has recently emerged as a promising technique for low-cost and ultrafast production of flexible electronics. In this work, we demonstrate photonic curing-based low-cost fabrication of ZrO2-based high-k dielectric and ZnO-based semiconducting layers for low-voltage, high-performance, flexible, and transparent thin-film transistors (TFTs). Such metal oxide-based devices are extremely important to realize next-generation technologies with high power efficiency, optical transparency,mecahnical flexibility, high reliability, and environmental stability. In the current work, photonic cured ZrO2 and ZnO layers were obtained by exposing their spin-coated precursor solutions to the high-energy pulsed light of a xenon flash lamp. The numbers of applied pulses were varied for optimization. Hence, the optimally cured ZrO2 film exhibited excellent dielectric property with high areal capacitance of ∼485 nFcm–2, low leakage current density of 10–4 A cm–2, and high breakdown strength of ∼2.3 MV cm–1 which further enabled the low-voltage operation (< 3 V) for the fabricated TFTs. On the other hand, the optimally cured ZnO layer resulted in the high performance for the TFTs with field-effect mobility of 3.4 ± 0.1 cm2 V–1 s–1, on–off ratio of 3.3 ± 0.8 × 105, and threshold voltage of 0.8 ± 0.03 V. The mechanical flexibility of these devices was demonstrated by showing their operational stability under mechancial bending and after continuous bending cycles. These devices also exhibited optical transparency up to 80% in the visible wavelength range. To explain the behavior of these photonic cured layers and devices under different process conditions, several microscopic and spectroscopic studies were performed. Finally, the ultraviolet–visible absorption spectroscopy and a finite element simulation study also showed the viability of photonic curing to successfully fabricate solution-derived ZnO and ZrO2 layers on a flexible substrate.

quote

GB/T 7714-2015 [1] Sudipta Kumar Sarkar, Dinabandhu Maji, Javed Alam Khan, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00229.
MLA [1] Sudipta Kumar Sarkar, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00229.
APA [1] Sudipta Kumar Sarkar, Dinabandhu Maji, Javed Alam Khan, Siddharth Kurup, & Dipti Gupta. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00229
IEEE [1] Sudipta Kumar Sarkar, Dinabandhu Maji, Javed Alam Khan, Siddharth Kurup, and Dipti Gupta, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00229. keywords: {photonic curing metal oxides highk dielectric thinfilm transistor flexible electronics}