Electron Doping-Induced Metal–Insulator Transition in LaNiO3 and Memory Devices Electron Doping-Induced Metal–Insulator Transition in LaNiO3 and Memory Devices AITranslate

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DOI：https://doi.org/10.1021/acsaelm.2c00242

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LaNiO3 (LNO) is the only rare-earth nickelate that does not undergo a temperature-driven insulator–metal transition. Here, we report the successful deposition of epitaxial LNO thin films on LaAlO3 substrates by a chemical solution deposition method. We report a metal–insulator transition driven by electron doping from hydrogen using catalytic Pd electrodes. A series of in-plane devices with LNO thin films and Pd–Au as the two working terminals were designed and fabricated by photolithography. We report their resistance switching behavior and synaptic multi-resistance states under voltage pulses. The results demonstrate the universality of electron doping-driven phase transitions in the rare-earth nickelates and their relevance to emerging memory and computing technologies.