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Rectifying Effect in a High-Performance Ballistic Diode Bridge Based on Encapsulated Graphene with a Unique Design Rectifying Effect in a High-Performance Ballistic Diode Bridge Based on Encapsulated Graphene with a Unique Design AITranslate

Dinh Cong Nguyen; Minwook Kim; Van Huy Nguyen; Yeonjae Lee; Dongwoon Kang; Sunil Kumar; Thi Phuong Anh Bach; Muhammad Hussain; Jongwan Jung; Yongho Seo
Department of Nanotechnology and Advanced Materials EngineeringSejong University;Department of Nanotechnology and Advanced Materials EngineeringSejong University;Department of Nanotechnology and Advanced Materials EngineeringSejong University;Department of Nanotechnology and Advanced Materials EngineeringSejong University;Department of Nanotechnology and Advanced Materials EngineeringSejong University; Sejong University;Department of Nanotechnology and Advanced Materials EngineeringSejong University;Department of Nanotechnology and Advanced Materials EngineeringSejong University;Department of Nanotechnology and Advanced Materials EngineeringSejong University; Sejong University
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Abstract AITranslate

The long mean free path close to a micrometer in encapsulated graphene enabled us to rectify currents ballistically at room temperature. In this study, we introduce a ballistic rectifier that resembles a diode bridge and is based on graphene encapsulated using hexagonal boron nitride. Our device’s asymmetric geometry combined with the exploitation of the ratcheting effect means that it can operate successfully and provides excellent performance. The device’s estimated responsivities at 38 000 V/W for holes and 23 000 V/W for electrons at room temperature are among the highest values for a ballistic device reported to date.

KeyWords AITranslate

hBN encapsulated graphene ballistic graphene cross junction bridge ballistic graphene device ballistic rectification ballistic diodeShow More
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.1c01035

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Citation Information:

The long mean free path close to a micrometer in encapsulated graphene enabled us to rectify currents ballistically at room temperature. In this study, we introduce a ballistic rectifier that resembles a diode bridge and is based on graphene encapsulated using hexagonal boron nitride. Our device’s asymmetric geometry combined with the exploitation of the ratcheting effect means that it can operate successfully and provides excellent performance. The device’s estimated responsivities at 38 000 V/W for holes and 23 000 V/W for electrons at room temperature are among the highest values for a ballistic device reported to date.

quote

GB/T 7714-2015 [1] Dinh Cong Nguyen, Minwook Kim, Van Huy Nguyen, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.1c01035.
MLA [1] Dinh Cong Nguyen, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.1c01035.
APA [1] Dinh Cong Nguyen, Minwook Kim, Van Huy Nguyen, Yeonjae Lee, Dongwoon Kang, Sunil Kumar, Thi Phuong Anh Bach, Muhammad Hussain, Jongwan Jung, & Yongho Seo. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.1c01035
IEEE [1] Dinh Cong Nguyen, Minwook Kim, Van Huy Nguyen, Yeonjae Lee, Dongwoon Kang, Sunil Kumar, Thi Phuong Anh Bach, Muhammad Hussain, Jongwan Jung, and Yongho Seo, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.1c01035. keywords: {hBN encapsulated graphene ballistic graphene cross junction bridge ballistic graphene device ballistic rectification ballistic diodeShow More}