Ag-GST/HfOx-based unidirectional threshold switching selector with low leakage current and threshold voltage distribution for high-density cross-point arrays AITranslate
Abstract AITranslate
The use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to their high on-off ratios and simple structure.However,these devices are unsuitable for cross-point architectures because of the difficulty in controlling the random filament formation that results in large fluctuations in the threshold voltage during operation.In this study,we investigated the unidirectional threshold transition characteristics associated with an Ag/GST/HfOx/Pt-based bilayer selector and demonstrated the occurrence of a low leakage current(<1×10-11 A) and low distribution of the threshold voltage(Δ0.11 V).The bilayer structure could control the filament formation in the intermediate state through the insertion of an HfOx tunneling barrier.By stacking a bilayer selector with NiOxbased resistive random-access memory,the leakage and programming currents of the device could be significantly decreased.For the crossbar array configuration,we performed equivalent circuit analysis of a one-selector oneresistor(1S1R) devices and estimated the optimal array size to demonstrate the applicability of the proposed structure.The maximum acceptable crossbar array size of the 1S1R device with the Ag/GST/HfOx/Pt/Ti/NiOx/Pt structure was 5.29×1014(N2,N=2.3×107).
KeyWords AITranslate
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Basic Information:
DOI：
Chinese Library Classification Number:TP333[自动化与计算机技术—计算机系统结构]
Citation Information:
The use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to their high on-off ratios and simple structure.However,these devices are unsuitable for cross-point architectures because of the difficulty in controlling the random filament formation that results in large fluctuations in the threshold voltage during operation.In this study,we investigated the unidirectional threshold transition characteristics associated with an Ag/GST/HfOx/Pt-based bilayer selector and demonstrated the occurrence of a low leakage current(<1×10-11 A) and low distribution of the threshold voltage(Δ0.11 V).The bilayer structure could control the filament formation in the intermediate state through the insertion of an HfOx tunneling barrier.By stacking a bilayer selector with NiOxbased resistive random-access memory,the leakage and programming currents of the device could be significantly decreased.For the crossbar array configuration,we performed equivalent circuit analysis of a one-selector oneresistor(1S1R) devices and estimated the optimal array size to demonstrate the applicability of the proposed structure.The maximum acceptable crossbar array size of the 1S1R device with the Ag/GST/HfOx/Pt/Ti/NiOx/Pt structure was 5.29×1014(N2,N=2.3×107).
quote
| GB/T 7714-2015 | [1] Kyoung-Joung Yoo, Dae-Yun Kang, Nahyun Kim, et al. Rare Metals, 2024(1): 280-288. |
| MLA | [1] Kyoung-Joung Yoo, et al., Rare Metals, no. 1, 2024, pp. 280-288. |
| APA | [1] Kyoung-Joung Yoo, Dae-Yun Kang, Nahyun Kim, Ho-Jin Lee, Ta-Hyeong Kim, Taeho Kim, & Tae Geun Kim. (2024). Rare Metals(1), 280-288. |
| IEEE | [1] Kyoung-Joung Yoo, Dae-Yun Kang, Nahyun Kim, Ho-Jin Lee, Ta-Hyeong Kim, Taeho Kim, and Tae Geun Kim, Rare Metals, no. 1, pp. 280-288, 2024. |