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Two-Dimensional Nanocrystal Assemblies for Photocapacitive Devices Two-Dimensional Nanocrystal Assemblies for Photocapacitive Devices AITranslate

Indian Institute of Science; Indian Institute of Science; Indian Institute of Science; Indian Institute of Science; Indian Institute of Science; Indian Institute of Science; Indian Institute of Science; Indian Institute of Science
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Publisher: ACS
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Abstract AITranslate

We describe the emergence of photocapacitance in two-dimensional layered nanocrystal assemblies. Devices are electrically probed by the application of a lateral bias across interdigitated electrodes. We observe capacitive current–voltage characteristics that are individually absent in the nanocrystals. Besides the occurrence of a large zero-bias capacitance, the assemblies further show a transient negative capacitive behavior where the small signal capacitance is found to attain values over a ±100 nF range. We show that this system behaves as a damped anharmonic oscillator. Further, the bias dependence of capacitance, characteristics under asymmetric cycling, as well as its relationship with shunt resistance are consistent with the system attaining a transient negative capacitance while migrating around a single energy minimum. We show modulation of the capacitive behavior by incident light enabling the usage of these materials in a photocapacitive detector device.

KeyWords AITranslate

nanocrystals assemblies photodetector negative capacitance 2D quantum dots
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Basic Information:

DOI:https://doi.org/10.1021/acsaelm.2c01785

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Citation Information:

We describe the emergence of photocapacitance in two-dimensional layered nanocrystal assemblies. Devices are electrically probed by the application of a lateral bias across interdigitated electrodes. We observe capacitive current–voltage characteristics that are individually absent in the nanocrystals. Besides the occurrence of a large zero-bias capacitance, the assemblies further show a transient negative capacitive behavior where the small signal capacitance is found to attain values over a ±100 nF range. We show that this system behaves as a damped anharmonic oscillator. Further, the bias dependence of capacitance, characteristics under asymmetric cycling, as well as its relationship with shunt resistance are consistent with the system attaining a transient negative capacitance while migrating around a single energy minimum. We show modulation of the capacitive behavior by incident light enabling the usage of these materials in a photocapacitive detector device.

quote

GB/T 7714-2015 [1] Rekha Mahadevu, Triloki Pandit, Jibin J. Samuel, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.2c01785.
MLA [1] Rekha Mahadevu, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.2c01785.
APA [1] Rekha Mahadevu, Triloki Pandit, Jibin J. Samuel, Uddipan Ghosh, Biman Jana, Hridesh Kumar Gupta, Nagaphani Aetukuri, & Anshu Pandey. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.2c01785
IEEE [1] Rekha Mahadevu, Triloki Pandit, Jibin J. Samuel, Uddipan Ghosh, Biman Jana, Hridesh Kumar Gupta, Nagaphani Aetukuri, and Anshu Pandey, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.2c01785. keywords: {nanocrystals assemblies photodetector negative capacitance 2D quantum dots}