Structural Optimized H-Gate High Schottky Barrier Bidirectional Tunnel Field Effect Transistor Structural Optimized H-Gate High Schottky Barrier Bidirectional Tunnel Field Effect Transistor AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00216

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In this work, we proposed a structural optimized H-shaped gate bidirectional tunnel field effect transistor with high on-state current based on high Schottky barrier plug-in source–drain contacts and central assistant gate (H-Gate HSB-BTFET). Compared to the previously proposed high Schottky barrier bidirectional tunnel field effect transistor (HSB-BTFET), the proposed H-Gate BTFET achieves excellent switching characteristics such as better forward on-state current, lower subthreshold swing (SS), lower power consumption, higher Ion–Ioff ratio, and lower band to band tunneling (BTBT) induced leakage. The physical mechanism of device performance improvement is explained, analyzed, and compared with HSB-BTFET. In addition, no more complex process technology and expensive millisecond annealing process are needed; the proposed H-Gate BTFET can be used as an alternative candidate for mainstream integration technology.