High-Performance Photodetector Based on the ReSe2/PtSe2 van der Waals Heterojunction High-Performance Photodetector Based on the ReSe2/PtSe2 van der Waals Heterojunction AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00220

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In recent years, heterojunction photodetectors constructed of two-dimensional materials with no overhanging bonds and lattice mismatches have attracted wide attention due to the advantages of integrating different materials. Here, we report a high-performance photodetector with tunable dual auroral responses based on the semiconductor (ReSe2) and semimetal (PtSe2) heterojunctions, with a high reverse commutation ratio of 6.2 × 104 at room temperature. Under visible light irradiation, the photodetector, with an open circuit voltage of 0.2 V and a short circuit current of 19 pA, and a high on/off ratio of 5.5 × 104, exhibits a clear photovoltaic effect. At the same time, the photodetector shows a photoelectric responsivity and detectivity of 153 mA/W and 7.72 × 1011 Jones, respectively. The photodetector also shows a large wideband optical detection capability between ultraviolet and near-infrared light. Our work provides a model to develop future electronic and optoelectronic multifunctional devices based on a 2D semiconductor and a semimetal van der Waals heterojunction.