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Effect of substrates and underlayer on CNT synthesis by plasma enhanced CVD AITranslate

Liang Xu; Di Jiang; YiFeng Fu; Stephane Xavier; Shailendra Bansropun; Afshin Ziaei; ShanTung Tu; Johan Liu
Chalmers University of Technology; Chalmers University of Technology;SHT Smart High Tech AB;Thales Research and Technology;Thales Research and Technology;Thales Research and Technology; East China University of Science and Technology; Shanghai University
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Publisher: Springer Nature
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Abstract AITranslate

Due to their unique thermal, electronic and mechanical properties, carbon nanotubes (CNTs) have aroused various attentions of many researchers. Among all the techniques to fabricate CNTs, plasma enhanced chemical vapor deposition (PECVD) has been extensively developed as one growth technique to produce vertically-aligned carbon nanotubes (VACNTs). Though CNTs show a trend to be integrated into nanoelectromechanical system (NEMS), CNT growth still remains a mysterious technology. This paper attempts to reveal the effects of substrates and underlayers to CNT synthesis. We tried five different substrates by substituting intrinsic Si with high resistivity ones and by increasing the thickness of SiO2 insulativity layer. And also, we demonstrated an innovative way of adjusting CNT density by changing the thickness of Cu underlayer.

KeyWords AITranslate

Carbon nanotube (CNT) Substrate Underlayer Effect
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Basic Information:

DOI：https://doi.org/10.1007/s40436-013-0036-z

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Citation Information:

Due to their unique thermal, electronic and mechanical properties, carbon nanotubes (CNTs) have aroused various attentions of many researchers. Among all the techniques to fabricate CNTs, plasma enhanced chemical vapor deposition (PECVD) has been extensively developed as one growth technique to produce vertically-aligned carbon nanotubes (VACNTs). Though CNTs show a trend to be integrated into nanoelectromechanical system (NEMS), CNT growth still remains a mysterious technology. This paper attempts to reveal the effects of substrates and underlayers to CNT synthesis. We tried five different substrates by substituting intrinsic Si with high resistivity ones and by increasing the thickness of SiO2 insulativity layer. And also, we demonstrated an innovative way of adjusting CNT density by changing the thickness of Cu underlayer.

quote

GB/T 7714-2015 [1] Liang Xu, Di Jiang, YiFeng Fu, et al. Advances in Manufacturing, 2013(1). DOI:10.1007/s40436-013-0036-z.
MLA [1] Liang Xu, et al., Advances in Manufacturing, no. 1, 2013, https://doi.org/10.1007/s40436-013-0036-z.
APA [1] Liang Xu, Di Jiang, YiFeng Fu, Stephane Xavier, Shailendra Bansropun, Afshin Ziaei, ShanTung Tu, & Johan Liu. (2013). Advances in Manufacturing(1). https://doi.org/10.1007/s40436-013-0036-z
IEEE [1] Liang Xu, Di Jiang, YiFeng Fu, Stephane Xavier, Shailendra Bansropun, Afshin Ziaei, ShanTung Tu, and Johan Liu, Advances in Manufacturing, no. 1, 2013, doi: 10.1007/s40436-013-0036-z. keywords: {Carbon nanotube (CNT);Substrate;Underlayer;Effect}