Effects of Sputtering Nitrogen Partial Pressure on Microstructure and Properties of Zr-Nb-N Film AITranslate

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Chinese Library Classification Number:TG146.41[金属学及工艺—金属材料]

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Zr-Nb-N film was deposited on monocrystalline silicon wafer with RF magnetron sputtering method at different nitrogen partial pressure. The results from EDS, TEM and XRD analysis show that with the increase of nitrogen partial pressure, nitrogen content in the film increases but niobium content decreases. Meanwhile, fine grain structure coarsens, and the two phases of NbN and ZrN are separated from the single phase of Zr-Nb-N solid solution. Four-probe resistance meters and microhardness tester were used to characterize sheet resistance and microhardness of the film. The results show that with nitrogen partial pressure increasing, sheet resistance of the film declines,and microhardness increases first and then decreases.