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Spinterface Effects in Hybrid La0.7Sr0.3MnO3/SrTiO3/C60/Co Magnetic Tunnel Junctions AITranslate

Institute of Nanostructured Materials ISMN-CNR; Osaka University; Université de Toulouse;Institute of Nanostructured Materials ISMN-CNR;Institute of Nanostructured Materials ISMN-CNR; University of Glasgow;CSIR - National Physical Laboratory;CSIR - National Physical Laboratory;Institute of Nanostructured Materials ISMN-CNR; Osaka University; Université Paris-Saclay;Institute of Nanostructured Materials ISMN-CNR
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Publisher: ACS
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Abstract AITranslate

Orbital hybridization at the Co/C60 interface been has proved to strongly enhance the magnetic anisotropy of the cobalt layer, promoting such hybrid systems as appealing components for sensing and memory devices. Correspondingly, the same hybridization induces substantial variations in the ability of the Co/C60 interface to support spin-polarized currents and can bring out a spin-filtering effect. The knowledge of the effects at both sides allows for a better and more complete understanding of interfacial physics. In this paper we investigate the Co/C60 bilayer in the role of a spin-polarized electrode in the La0.7Sr0.3MnO3/SrTiO3/C60/Co configuration, thus substituting the bare Co electrode in the well-known La0.7Sr0.3MnO3/SrTiO3/Co magnetic tunnel junction. The study revealed that the spin polarization (SP) of the tunneling currents escaping from the Co/C60 electrode is generally negative: i.e., inverted with respect to the expected SP of the Co electrode. The observed sign of the spin polarization was confirmed via DFT calculations by considering the hybridization between cobalt and molecular orbitals.

KeyWords AITranslate

tunnel junction spinterface molecular spintronics C60 hybrid interface spindependent density of states
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Basic Information:

DOI:https://doi.org/10.1021/acsaelm.2c00300

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Citation Information:

Orbital hybridization at the Co/C60 interface been has proved to strongly enhance the magnetic anisotropy of the cobalt layer, promoting such hybrid systems as appealing components for sensing and memory devices. Correspondingly, the same hybridization induces substantial variations in the ability of the Co/C60 interface to support spin-polarized currents and can bring out a spin-filtering effect. The knowledge of the effects at both sides allows for a better and more complete understanding of interfacial physics. In this paper we investigate the Co/C60 bilayer in the role of a spin-polarized electrode in the La0.7Sr0.3MnO3/SrTiO3/C60/Co configuration, thus substituting the bare Co electrode in the well-known La0.7Sr0.3MnO3/SrTiO3/Co magnetic tunnel junction. The study revealed that the spin polarization (SP) of the tunneling currents escaping from the Co/C60 electrode is generally negative: i.e., inverted with respect to the expected SP of the Co electrode. The observed sign of the spin polarization was confirmed via DFT calculations by considering the hybridization between cobalt and molecular orbitals.

quote

GB/T 7714-2015 [1] Ilaria Bergenti, Takeshi Kamiya, Dongzhe Li, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00300.
MLA [1] Ilaria Bergenti, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00300.
APA [1] Ilaria Bergenti, Takeshi Kamiya, Dongzhe Li, Alberto Riminucci, Patrizio Graziosi, Donald A. MacLaren, Rajib K. Rakshit, Manju Singh, Mattia Benini, Hirokazu Tada, Alexander Smogunov, & Valentin A. Dediu. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00300
IEEE [1] Ilaria Bergenti, Takeshi Kamiya, Dongzhe Li, Alberto Riminucci, Patrizio Graziosi, Donald A. MacLaren, Rajib K. Rakshit, Manju Singh, Mattia Benini, Hirokazu Tada, Alexander Smogunov, and Valentin A. Dediu, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00300. keywords: {tunnel junction spinterface molecular spintronics C60 hybrid interface spindependent density of states}