Crystallization Behavior of Zinc-Doped Nb2O5 Thin Films Synthesized by Atomic Layer Deposition AITranslate

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DOI：https://doi.org/10.1021/acsaelm.2c00446

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Neuromorphic computational devices built from memristive materials provide a potential path toward improved power and computational efficiency in a merged biomimetic and CMOS architecture. The key to such a framework is developing materials that can be reliably engineered into neuromorphic devices and integrated with CMOS platforms. Niobium dioxide has volatile memristive properties that make it an ideal candidate for future neuromorphic electronics. In this study, we thermally crystallized and reduced thin films of amorphous niobium oxide (Nb2O5) that were deposited with atomic layer deposition. We found that doping the as-deposited niobium oxide with zinc led to a lower initial crystallization temperature, which is a necessary step toward neuromorphic integration with CMOS devices that have a strict thermal budget.