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Oxygen Vacancies Controlled Highly Stable Bilayer Analog Synapse Used for Neuromorphic Computing Systems Oxygen Vacancies Controlled Highly Stable Bilayer Analog Synapse Used for Neuromorphic Computing Systems AITranslate

National Yang Ming Chiao Tung University; National Cheng-Kung University;Research Center for Applied Sciences, Academia Sinica; Chung Hua University; National Yang Ming Chiao Tung University
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Publisher: ACS
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Abstract AITranslate

This study investigated an oxygen-vacancy-controlled bilayer TiN/TaOy/TaOx/Pt memristive synaptic device for neuromorphic computing. Multilevel characteristics of the synaptic device were observed with RESET voltage varying between −1.4 and −1.9 V. The device shows highly stable reparative 200 potentiation and depression cycles. The high nonlinearity results of αp = 0.83 for potentiation and αd = −2.03 for depression were observed with the device’s potentiation and depression functions. The device also exhibits a highly stable DC endurance of at least 1000 cycles, an AC pulse endurance of 1 M, and a steady retention of 104 s at 100 °C without any degradation. Furthermore, a Hopfield neural network (HNN) is trained to recognize a 28 × 28 pixels image as an input, representing 784 synapses. In 23 epochs, the HNN successfully identified the input image with training accuracy over 92%. This bilayer memristive device can be highly suitable for neuromorphic devices in the development of neuromorphic-computing field.

KeyWords AITranslate

bilayer resistive switching memristor synapse oxygen vacancy neural network
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Basic Information:

DOI:https://doi.org/10.1021/acsaelm.2c00272

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Citation Information:

This study investigated an oxygen-vacancy-controlled bilayer TiN/TaOy/TaOx/Pt memristive synaptic device for neuromorphic computing. Multilevel characteristics of the synaptic device were observed with RESET voltage varying between −1.4 and −1.9 V. The device shows highly stable reparative 200 potentiation and depression cycles. The high nonlinearity results of αp = 0.83 for potentiation and αd = −2.03 for depression were observed with the device’s potentiation and depression functions. The device also exhibits a highly stable DC endurance of at least 1000 cycles, an AC pulse endurance of 1 M, and a steady retention of 104 s at 100 °C without any degradation. Furthermore, a Hopfield neural network (HNN) is trained to recognize a 28 × 28 pixels image as an input, representing 784 synapses. In 23 epochs, the HNN successfully identified the input image with training accuracy over 92%. This bilayer memristive device can be highly suitable for neuromorphic devices in the development of neuromorphic-computing field.

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GB/T 7714-2015 [1] Umesh Gawai, Dayanand Kumar, Amit Singh, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00272.
MLA [1] Umesh Gawai, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00272.
APA [1] Umesh Gawai, Dayanand Kumar, Amit Singh, ChienHung Wu, & KowMing Chang. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00272
IEEE [1] Umesh Gawai, Dayanand Kumar, Amit Singh, ChienHung Wu, and KowMing Chang, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00272. keywords: {bilayer resistive switching memristor synapse oxygen vacancy neural network}