Excellent Comprehensive Electromechanical Properties in PZT-Based Hard High-Temperature Piezoceramics AITranslate

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High-power piezoelectric ceramics which have a wide operating temperature range are essential for sensor and actuator applications in extreme conditions. However, their development is fundamentally hindered by the inherent trade-off among key parameters (TC, d33, Qm). To transcend these limitations, we proposed a hierarchical design strategy in 0.97Pb(ZrxTi1-x)O3-0.03Bi(Mn1/2Ti1/2)O3 ceramics: Bi3+ and Mn2+/3+ as lattice constituents occupy A and B-sites to stabilize the morphotropic phase boundary at x = 0.51, reducing polarization rotation barriers (d33 = 405 pC N−1) and sintering temperature (1080°C). Additionally, the subsequent introduction of 0.2 wt% MnCO3 as an extrinsic dopant facilitates dual-site occupation, resulting in gradient-distributed oxygen vacancies that form ordered defect dipoles. The local random field disrupts ferroelectric long-range ordering, fostering a complex domain architecture that features both sub-micron and nanodomains. This stabilizes a dynamic equilibrium between irreversible domain-wall pinning and reversible polarization switching. Thus, the optimized material exhibits outstanding comprehensive electrical properties: d33 = 418 pC N−1, Qm = 550, TC = 351°C, kP = 0.59, tanδ = 0.0027. This work presents a novel material design paradigm for high-temperature high-performance piezoelectric materials.