Study on In-situ Low-temperature Deposition of Graphene on the Surface of HfO₂ Dielectric Film AITranslate

10邢涛麟,李玉,裴方方,余琼琼,丁晓雨,雷妤茜.Eu_(0.5)Ca_(0.5)Mn_(1-x)Al_(x)O_(3)制备、结构及其表征[J].广东化工,2021,48(17):3-4.

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Chinese Library Classification Number:TN304.18[电子电信—物理电子学]

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The combination of preparation process of high-k dielectric HfO₂film and in-situ deposition process of graphene was studied.Vacuum electron beam evaporation was used to deposit HfO₂ film on heavily doped Si substrate at room temperature,and the film samples were rapidly annealed for 90 s at a constant temperature of 400℃,450℃ and 500℃,respectively.AFM test results show that the root mean square roughness of the HfO₂ film surface after annealing treatment is not higher than 0.30 nm,which is at a low level.XRD test results show that the annealing treatment at different temperatures does not change the film structure,and all the samples are amorphous.Impedance test results show that the relative dielectric constants of the three groups of film samples are greater than 21 and their dielectric loss level is low,indicating that the HfO₂ films have good dielectric properties.The HfO₂ film prepared by electron beam evaporation at room temperature was used as the substrate,and graphene was grown in situ by PECVD at low temperature of 400℃,450℃ and 500℃.AFM and Raman test results show that the surface of the graphene sample deposited at 500℃ has the highest flatness within 10 layers,which achieves a good combination of the preparation processes of the insulating dielectric layer and the active layer of the graphene device.