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Minimizing the Interface-Driven Losses in Inverted Perovskite Solar Cells and Modules AITranslate

Hasselt University;SAT Department; Eindhoven University of Technology; Karlstad University; Karlstad University;Department of Electrical Engineering (ESAT), KU Leuven;Fakultät Physik/DELTA, Technische Universität Dortmund;Department of Electrical Engineering (ESAT), KU Leuven;TNO, High Tech Campus 21; Hasselt University; Hasselt University; Hasselt University; University of Science and Technology of China; Eindhoven University of Technology; Eindhoven University of Technology;TNO, High Tech Campus 31;TNO, High Tech Campus 21; Hasselt University; Fudan University; University of Twente; Hasselt University; Karlstad University; Eindhoven University of Technology; Fudan University; Hasselt University; Hasselt University
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Publisher: ACS
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Abstract AITranslate

The inverted p-i-n perovskite solar cells hold high promise for scale-up toward commercialization. However, the interfaces between the perovskite and the charge transport layers contribute to major power conversion efficiency (PCE) loss and instability. Here, we use a single material of 2-thiopheneethylammonium chloride (TEACl) to molecularly engineer both the interface between the perovskite and fullerene-C60 electron transport layer and the buried interface between the perovskite and NiOx-based hole transport layer. The dual interface modification results in optimized band alignment, suppressed nonradiative recombination, and improved interfacial contact. A PCE of 24.3% is demonstrated, with open-circuit voltage (Voc) and fill factor (FF) of 1.17 V and 84.6%, respectively. The unencapsulated device retains >97.0% of the initial performance after 1000 h of maximum power point tracking under illumination. Moreover, a PCE of 22.6% and a remarkable FF of 82.4% are obtained for a mini-module with an active area of 3.63 cm2.

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DOI:https://doi.org/10.1021/acsenergylett.3c00697

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Citation Information:

The inverted p-i-n perovskite solar cells hold high promise for scale-up toward commercialization. However, the interfaces between the perovskite and the charge transport layers contribute to major power conversion efficiency (PCE) loss and instability. Here, we use a single material of 2-thiopheneethylammonium chloride (TEACl) to molecularly engineer both the interface between the perovskite and fullerene-C60 electron transport layer and the buried interface between the perovskite and NiOx-based hole transport layer. The dual interface modification results in optimized band alignment, suppressed nonradiative recombination, and improved interfacial contact. A PCE of 24.3% is demonstrated, with open-circuit voltage (Voc) and fill factor (FF) of 1.17 V and 84.6%, respectively. The unencapsulated device retains >97.0% of the initial performance after 1000 h of maximum power point tracking under illumination. Moreover, a PCE of 22.6% and a remarkable FF of 82.4% are obtained for a mini-module with an active area of 3.63 cm2.

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GB/T 7714-2015 [1] Xin Zhang, Weiming Qiu, Sofia Apergi, et al. ACS Energy Letters, 2023(8). DOI:10.1021/acsenergylett.3c00697.
MLA [1] Xin Zhang, et al., ACS Energy Letters, no. 8, 2023, https://doi.org/10.1021/acsenergylett.3c00697.
APA [1] Xin Zhang, Weiming Qiu, Sofia Apergi, Shivam Singh, Paulo Marchezi, Wenya Song, Christian Sternemann, Karim Elkhouly, Dong Zhang, Aranzazu Aguirre, Tamara Merckx, Anurag Krishna, Yuanyuan Shi, Andrea Bracesco, Cristian van Helvoirt, Frennie Bens, Valerio Zardetto, Jan D’Haen, Anran Yu, . . . Jef Poortmans. (2023). ACS Energy Letters(8). https://doi.org/10.1021/acsenergylett.3c00697
IEEE [1] Xin Zhang, Weiming Qiu, Sofia Apergi, Shivam Singh, Paulo Marchezi, Wenya Song, Christian Sternemann, Karim Elkhouly, Dong Zhang, Aranzazu Aguirre, Tamara Merckx, Anurag Krishna, Yuanyuan Shi, Andrea Bracesco, Cristian van Helvoirt, Frennie Bens, Valerio Zardetto, Jan D’Haen, Anran Yu, Geert Brocks, Tom Aernouts, Ellen Moons, Shuxia Tao, Yiqiang Zhan, Yinghuan Kuang, and Jef Poortmans, ACS Energy Letters, no. 8, 2023, doi: 10.1021/acsenergylett.3c00697.