Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00448

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SrRuO3 (SRO) is a promising electrode material for the next-generation dynamic random access memory (DRAM) capacitor. This study focuses on the properties of SRO electrode films grown by combining the atomic-layer deposition of SrO and pulsed-chemical vapor deposition of RuO2 component layers using Sr(iPr3Cp)2 (iPr3Cp = 1,2,4-trisisopropyl-cyclopentadienyl) and RuO4 precursors, respectively. Changes in the Ru concentration and electrical properties of SRO electrode films during postdeposition annealing (PDA) for crystallization were examined in detail. SRO films were crystallized after PDA in an O2 atmosphere, but the Ru concentration of SRO films was decreased due to volatile RuO4 formation. Also, the morphology of the film was degraded by agglomeration, which degraded the film′s performance. A thin Al2O3 film was deposited on or inserted into Ru and SRO films, and its effects on Ru-loss and crystallization were experimentally and theoretically investigated. The density functional theory calculation confirmed that Al substituted with Ru (AlRu) in the SRO film improved the crystallinity of cubic SRO. Thus, the Al2O3-layer-inserted or Al-substituted SRO films had a larger grain size, higher crystallinity, and improved surface morphology and maintained a lower resistivity down to 25 nm (∼1000 μΩ·cm).