Study on Influence of Tantalum Impurity on Aluminium Film Prepared by Vacuum Electron Beam Evaporation AITranslate
Abstract AITranslate
Aluminum ingots containing tantalum impurity underwent vacuum electron beam evaporation using a electron gun,resulting in the formation of a molten pool and aluminum vapor with increasing temperature.The tantalum content in different regions of the aluminum ingot was detected by inductively coupled plasma emission spectrometer(ICP-OES).The microstructure,chemical composition and phase composition of the aluminum ingot and evaporated aluminum film were investigated by scanning electron microscope(SEM),energy dispersive spectroscope(EDS)and X-ray diffractometer(XRD).The element speciation and composition of the aluminum ingot and aluminum film were analyzed using Auger electron spectrometer(AES)and X-ray photoelectron spectroscope(XPS),respectively.The results show that with the increase in tantalum content,the evaporation rate of the aluminum molten pool significantly increases.When the tantalum content is 41.39%,the evaporation rate is approximately 7.5 times that of the tantalum-free molten pool.During the evaporation process,tantalum is mainly concentrated in the middle and lower part of the molten pool,and the metal vapor does not contain tantalum.In the molten pool,tantalum primarily exists in the form of Al_3Ta with the existence of a small amount of pure tantalum.
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Basic Information:
DOI：
Chinese Library Classification Number:TN305.8[电子电信—物理电子学]
Citation Information:
Aluminum ingots containing tantalum impurity underwent vacuum electron beam evaporation using a electron gun,resulting in the formation of a molten pool and aluminum vapor with increasing temperature.The tantalum content in different regions of the aluminum ingot was detected by inductively coupled plasma emission spectrometer(ICP-OES).The microstructure,chemical composition and phase composition of the aluminum ingot and evaporated aluminum film were investigated by scanning electron microscope(SEM),energy dispersive spectroscope(EDS)and X-ray diffractometer(XRD).The element speciation and composition of the aluminum ingot and aluminum film were analyzed using Auger electron spectrometer(AES)and X-ray photoelectron spectroscope(XPS),respectively.The results show that with the increase in tantalum content,the evaporation rate of the aluminum molten pool significantly increases.When the tantalum content is 41.39%,the evaporation rate is approximately 7.5 times that of the tantalum-free molten pool.During the evaporation process,tantalum is mainly concentrated in the middle and lower part of the molten pool,and the metal vapor does not contain tantalum.In the molten pool,tantalum primarily exists in the form of Al_3Ta with the existence of a small amount of pure tantalum.
quote
| GB/T 7714-2015 | [1] LIU Huan, MA Xian, LU Xiao-yong, et al. Study on Influence of Tantalum Impurity on Aluminium Film Prepared by Vacuum Electron Beam Evaporation[J]. Rare Metals and Cemented Carbides, 2023(5): 65-72. |
| MLA | [1] LIU Huan, et al., "Study on Influence of Tantalum Impurity on Aluminium Film Prepared by Vacuum Electron Beam Evaporation." Rare Metals and Cemented Carbides, no. 5, 2023, pp. 65-72. |
| APA | [1] LIU Huan, MA Xian, LU Xiao-yong, WANG Ding-ding, ZHANG Xiao-wei, & LUO Li-ping. (2023). Study on Influence of Tantalum Impurity on Aluminium Film Prepared by Vacuum Electron Beam Evaporation. Rare Metals and Cemented Carbides(5), 65-72. |
| IEEE | [1] LIU Huan, MA Xian, LU Xiao-yong, WANG Ding-ding, ZHANG Xiao-wei, and LUO Li-ping, "Study on Influence of Tantalum Impurity on Aluminium Film Prepared by Vacuum Electron Beam Evaporation," Rare Metals and Cemented Carbides, no. 5, pp. 65-72, 2023. keywords: {vacuum electron beam evaporation;aluminum ingot;tantalum;molten pool;aluminum film;evaporation rate;composition distribution} |