Influence of SiH₄Flow Rate on Microstructure and Corrosion Resistance of C:Si Film Prepared by PECVD on the Surface of Titanium Alloy Plate for Fuel Cell AITranslate

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Chinese Library Classification Number:TG178[金属学及工艺—金属表面处理]

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By using methane as the carbon source,a layer of silicon-containing amorphous carbon(C:Si)film was prepared on the surface of titanium alloy plate for cell electrode plate by plasma enhanced chemical vapor deposition(PECVD).The discrepancies in conductivity,hydrophobicity,corrosion resistance,and thickness of the C:Si film prepared by different flow rates of SiH₄were compared,and the mechanism of SiH₄flow rate causing the change in the properties of C:Si film was analyzed in depth.The results show that the C:Si film bonds well with the substrate.When the SiH₄flow rate gradually increases,the film thickness increases.After increasing SiH₄flow rate,the hybridization ratio of the C:Si film increases from 0.58 to 1.11,and the half-peak width of G peak decreases from 168 cm^-1to 103 cm^-1.Thus it could be concluded that increasing SiH₄flow rate can induce graphitization transition of the C:Si film.The C:Si film prepared by the SiH₄flow rate at 6 mL/min has excellent corrosion resistance,and crystalline salt particles are formed on the film surface after polarization with no observation of peeling or micropore defects.The interfacial resistance of the C:Si film is significantly lower than that of the titanium substrate,and the hydrophobicity of the C:Si film is stronger than that of the titanium substrate.The lowest interfacial resistance and optimal hydrophobicity of the C:Si film are obtained at the SiH₄flow rate of 6 mL/min.