Electronic structure of InxGa1−xAsySb1−y alloys AITranslate

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DOI：https://doi.org/10.1016/j.commatsci.2009.12.034

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Electronic band structures and elastic properties of III–V quaternary InxGa1−xAsySb1−y alloys are presented following the empirical pseudopotential method. The alloying effects are modelled through the modified virtual crystal approximation. Calculations are also performed to report the density of states, refractive index, and ionicity factors. Among elastic properties the elastic constants and bulk modulus are reported. The electronic structure, optical and elastic properties are reported for the In0.25Ga0.75As0.25Sb0.75, In0.25Ga0.75As0.75Sb0.25, In0.75Ga0.25As0.25Sb0.75 and In0.75Ga0.25As0.75Sb0.25 compositions. Dependence of the band gap, refractive index and the ionicity with the cationic and anionic compositions are discussed. The results are compared with the available theoretical and experimental data of lattice matched compounds.