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Mechanism and Equivalent Circuit Model of Multielement Metal-Oxide Thin-Film Photodetectors Mechanism and Equivalent Circuit Model of Multielement Metal-Oxide Thin-Film Photodetectors AITranslate

ChaoI Liu; PinHung Chung; YouYan Lu; ChiaTung Kuo; TzuHsuan Wang; TriRung Yew
National Tsing Hua University; National Tsing Hua University; National Tsing Hua University; National Tsing Hua University; National Tsing Hua University; National Tsing Hua University
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Publisher: ACS
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Abstract AITranslate

In this paper, photodetector devices with a trilayer structure of p+-Si-substrate (p+-Si)/multielement metal-oxide thin film (MO)/indium tin oxide thin film (ITO) were built, and the associated possible mechanism was discussed. An equivalent circuit model for trilayer photodetectors based on the band structure and I–V characteristic was developed. The I–V characteristics and the equivalent circuit model of the photodetector based on the energy band structure were verified via HSPICE simulation and were investigated comprehensively. The accuracy of the simulation results was greater than 99%. This work paves the way for understanding the working mechanism as well as the potential application for optimizing device fabrication for multielement photodetectors.

KeyWords AITranslate

equivalent circuit simulation energy band structure photodetectors multielement metaloxide thin films
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.1c01069

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Citation Information:

In this paper, photodetector devices with a trilayer structure of p+-Si-substrate (p+-Si)/multielement metal-oxide thin film (MO)/indium tin oxide thin film (ITO) were built, and the associated possible mechanism was discussed. An equivalent circuit model for trilayer photodetectors based on the band structure and I–V characteristic was developed. The I–V characteristics and the equivalent circuit model of the photodetector based on the energy band structure were verified via HSPICE simulation and were investigated comprehensively. The accuracy of the simulation results was greater than 99%. This work paves the way for understanding the working mechanism as well as the potential application for optimizing device fabrication for multielement photodetectors.

quote

GB/T 7714-2015 [1] ChaoI Liu, PinHung Chung, YouYan Lu, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.1c01069.
MLA [1] ChaoI Liu, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.1c01069.
APA [1] ChaoI Liu, PinHung Chung, YouYan Lu, ChiaTung Kuo, TzuHsuan Wang, & TriRung Yew. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.1c01069
IEEE [1] ChaoI Liu, PinHung Chung, YouYan Lu, ChiaTung Kuo, TzuHsuan Wang, and TriRung Yew, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.1c01069. keywords: {equivalent circuit simulation energy band structure photodetectors multielement metaloxide thin films}