daohang fenxiangbox searchbox qikanlogonew daohangnew searchboxnew navrightzone footerzone paper
English
Chinese 简体中文 English English
Home > Journals > ACS Applied Electronic Materials
‹ Previous Article Next Article ›

Characteristics of High-Power Impulse Magnetron Sputtering ITO/Ag/ITO Films for Application in Transparent Micro-LED Displays Characteristics of High-Power Impulse Magnetron Sputtering ITO/Ag/ITO Films for Application in Transparent Micro-LED Displays AITranslate

KaiPing Chang; YuWun Chien; PoHsiang Wang; ChaoChun Yen; YingXiang Lin; YingJie Gao; WanYu Wu; DongSing Wuu
National Chung Hsing University; National Chung Hsing University; National Chung Hsing University; National Chung Hsing University; National Chung Hsing University; Da-Yeh University; National United University; National Chung Hsing University
AITranslate
Publisher: ACS
Share Citation Information Add to Favorites

    Scan to share on WeChat or Moments

Use WeChat scan.
Share with WeChat friends or Moments

Abstract AITranslate

In this study, a blue transparent micro-LED display with a chip size of 20 μm × 20 μm, a pixel density of 152 PPI, a pixel spacing of 150 μm, and a resolution of 64 × 32 has been fabricated. ITO/Ag/ITO transparent layers were deposited by high-power impulse magnetron sputtering. Sheet resistance was used to analyze the electrical properties of the indium tin oxide (ITO) layers, whereas scanning electron microscopy, transmission electron microscopy, and atomic force microscopy were used to examine the surface morphology. These results demonstrate that the ITO/Ag/ITO structure with 20 nm thick Ag has a lower sheet resistance (3.36 Ω/sq) and sufficient visible light transmittance (80.45%). The visible light transmittance of the ITO/Ag/ITO layers increased to 86% after rapid thermal annealing. In addition, surface roughness was minimized, and sheet resistance was further reduced, resulting in ohmic contact on n-GaN that is suited for applications involving transparent micro-LED displays.

KeyWords AITranslate

transparent microLED displays transparent conductive film indium tin oxide HIPIMS ITO/Ag/ITO
No data

Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c01461

Chinese Library Classification Number:

Citation Information:

In this study, a blue transparent micro-LED display with a chip size of 20 μm × 20 μm, a pixel density of 152 PPI, a pixel spacing of 150 μm, and a resolution of 64 × 32 has been fabricated. ITO/Ag/ITO transparent layers were deposited by high-power impulse magnetron sputtering. Sheet resistance was used to analyze the electrical properties of the indium tin oxide (ITO) layers, whereas scanning electron microscopy, transmission electron microscopy, and atomic force microscopy were used to examine the surface morphology. These results demonstrate that the ITO/Ag/ITO structure with 20 nm thick Ag has a lower sheet resistance (3.36 Ω/sq) and sufficient visible light transmittance (80.45%). The visible light transmittance of the ITO/Ag/ITO layers increased to 86% after rapid thermal annealing. In addition, surface roughness was minimized, and sheet resistance was further reduced, resulting in ohmic contact on n-GaN that is suited for applications involving transparent micro-LED displays.

quote

GB/T 7714-2015 [1] KaiPing Chang, YuWun Chien, PoHsiang Wang, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.2c01461.
MLA [1] KaiPing Chang, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.2c01461.
APA [1] KaiPing Chang, YuWun Chien, PoHsiang Wang, ChaoChun Yen, YingXiang Lin, YingJie Gao, WanYu Wu, & DongSing Wuu. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.2c01461
IEEE [1] KaiPing Chang, YuWun Chien, PoHsiang Wang, ChaoChun Yen, YingXiang Lin, YingJie Gao, WanYu Wu, and DongSing Wuu, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.2c01461. keywords: {transparent microLED displays transparent conductive film indium tin oxide HIPIMS ITO/Ag/ITO}