Al-doped ZnO/WO₃ heterostructure films prepared by magnetron sputtering for isopropanol sensors AITranslate

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Chinese Library Classification Number:TB383.2[一般工业技术—材料科学与工程]

Citation Information:

Metal oxide semiconductors(MOSs) are ideal sensing materials for detecting volatile organic compounds due to their low cost, diversity, high stability, and ease of production. However, it remains a grand challenge to develop the MOSs-based gas sensors for sensing isopropanol with desired performance via a simple, effective,and controllable method. Herein, we reported the preparation of the Al-doped Zn O(AZO)/WO₃ heterostructure films by directly depositing the AZO coating onto the WO₃ coating using a strategy of magnetron sputtering. The AZO/WO₃ heterostructure films were constructed by numbers of irregular nanoparticles that were interconnected with each other. The AZO/WO₃ heterostructure films-based gas sensors exhibited excellent isopropanolsensing performance with high response, promising selectivity, low detection limit, fast response rate, wide detection range, and ideal reproducibility. The promising isopropanol-sensing performance of the AZO/WO₃ heterostructure films arises mainly from their high uniformity, unique microstructures with high surface roughness,and the construction of the heterostructure between the AZO and WO₃ coatings. This work provides a versatile approach to prepare the MOSs-based heterostructure films for assembling the gas sensors.