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Effects of Annealing Temperature on Phase Change of TiO_2 Thin Film Prepared by Magnetron Sputtering AITranslate

School of Material Science and Engineering,Liaoning University of Technology;School of Material Science and Engineering,Liaoning University of Technology;School of Material Science and Engineering,Liaoning University of Technology;School of Material Science and Engineering,Liaoning University of Technology
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Publisher: Editorial Office of Rare Metals and Cemented Carbides
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Abstract AITranslate

TiO_2 thin film was prepared by using RF magnetron sputtering and characterized with X-ray diffraction,scanning electron microscopy and four-probe method.The effects were studied of annealing temperature on the morphology,microstructure and electrical performance of TiO_2 thin film at an argon atmosphere.The results show that the film has uniform particle size and compact surface structure under the conditions of argon atmosphere and 600 ℃ annealing temperature.The film has a single anatase phase at400~600 ℃ annealing temperature and an amorphous phase at 700 ℃ annealing temperature,and it is completely transformed into rutile phase at 800℃annealing temperature.TiO_2 thin film annealed at 500℃has the lowest resistivity and the best electrical performance.

KeyWords AITranslate

TiO2 thin film magnetron sputtering anatase rutile annealing temperature

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Basic Information:

DOI:

Chinese Library Classification Number:TG174.444[金属学及工艺—金属表面处理]

Citation Information:

TiO_2 thin film was prepared by using RF magnetron sputtering and characterized with X-ray diffraction,scanning electron microscopy and four-probe method.The effects were studied of annealing temperature on the morphology,microstructure and electrical performance of TiO_2 thin film at an argon atmosphere.The results show that the film has uniform particle size and compact surface structure under the conditions of argon atmosphere and 600 ℃ annealing temperature.The film has a single anatase phase at400~600 ℃ annealing temperature and an amorphous phase at 700 ℃ annealing temperature,and it is completely transformed into rutile phase at 800℃annealing temperature.TiO_2 thin film annealed at 500℃has the lowest resistivity and the best electrical performance.

quote

GB/T 7714-2015 [1] MEI Hai-lin, TANG Li-dan, WANG Bing, et al. Effects of Annealing Temperature on Phase Change of TiO_2 Thin Film Prepared by Magnetron Sputtering[J]. Rare Metals and Cemented Carbides, 2016(5): 60-63.
MLA [1] MEI Hai-lin, et al., "Effects of Annealing Temperature on Phase Change of TiO_2 Thin Film Prepared by Magnetron Sputtering." Rare Metals and Cemented Carbides, no. 5, 2016, pp. 60-63.
APA [1] MEI Hai-lin, TANG Li-dan, WANG Bing, & MEI Si-han. (2016). Effects of Annealing Temperature on Phase Change of TiO_2 Thin Film Prepared by Magnetron Sputtering. Rare Metals and Cemented Carbides(5), 60-63.
IEEE [1] MEI Hai-lin, TANG Li-dan, WANG Bing, and MEI Si-han, "Effects of Annealing Temperature on Phase Change of TiO_2 Thin Film Prepared by Magnetron Sputtering," Rare Metals and Cemented Carbides, no. 5, pp. 60-63, 2016. keywords: {TiO2 thin film;magnetron sputtering;anatase;rutile;annealing temperature}