Self-Heating Effect in a MoS2 Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer Self-Heating Effect in a MoS2 Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer AITranslate

Basic Information:

DOI：https://doi.org/10.1021/acsaelm.3c01469

Chinese Library Classification Number:

Citation Information:

The inefficient heat dissipation in two-dimensional (2D) semiconductor-based field-effect transistors (FETs) hampers their electrical performance and reliability. In this study, we address this issue by experimentally investigating the factors influencing the self-heating of MoS2-based 2D FETs and enhancing the heat dissipation of MoS2-based 2D FETs using a high thermal conductivity BN capping layer. The results demonstrate a significant reduction in the negative differential resistance (NDR) with 2D BN encapsulation, leading to improved electrical properties, such as increased saturation current density (average increase of 15.42%, maximum increase of 42%), and device saturation power density (average increase of 15.77%). This research sheds light on the self-heating effect in 2D FET devices and provides valuable insights for enhancing heat dissipation in 2D FETs through the use of high thermal conductivity insulator capping materials.