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Synthesis and Selenization of Thickness-Controllable In2O3 Films by Printed Oxide Skin of Liquid Metals AITranslate

Bingjie Liao; Honglie Shen; Hongyan Zhu; Boxiang Gao; Zehui Wang; Jingzhe Zhang; Weibiao Mao; Yufang Li; Tianru Wu
Nanjing University of Aeronautics & Astronautics; Nanjing University of Aeronautics & Astronautics; Shanghai Institute of Microsystem and Information Technology; City University of Hong Kong; Nanjing University of Aeronautics & Astronautics; Nanjing University of Aeronautics & Astronautics; Nanjing University of Aeronautics & Astronautics; Nanjing University of Aeronautics & Astronautics; Shanghai Institute of Microsystem and Information Technology
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Publisher: ACS
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Abstract AITranslate

Indium oxide (In2O3) has been reported widely due to its good optical properties and stability in optoelectronics and other fields. However, it is difficult to realize thickness control of atomically thin In2O3, which will confine the use of In2O3 films. Here, we report a simple and precise method to synthesize thickness-controllable In2O3 films using printed oxide skin of liquid metals. The cleaning processes were investigated to remove the metal residues on the films. It was found that liquid metal washing and annealing procedures could remove the residues without damaging the films and thus improve the uniformity. At the same time, the thickness of In2O3 films was controlled by adjusting the oxygen concentration of the atmosphere. Furthermore, the band gap regulation of indium oxide was realized by adjusting the thickness, which provided a good basis for the selenization of oxide films.

KeyWords AITranslate

In2O3 films thicknesscontrollable printed oxide skin of liquid metals In2Se3 films metal residues
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c01571

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Citation Information:

Indium oxide (In2O3) has been reported widely due to its good optical properties and stability in optoelectronics and other fields. However, it is difficult to realize thickness control of atomically thin In2O3, which will confine the use of In2O3 films. Here, we report a simple and precise method to synthesize thickness-controllable In2O3 films using printed oxide skin of liquid metals. The cleaning processes were investigated to remove the metal residues on the films. It was found that liquid metal washing and annealing procedures could remove the residues without damaging the films and thus improve the uniformity. At the same time, the thickness of In2O3 films was controlled by adjusting the oxygen concentration of the atmosphere. Furthermore, the band gap regulation of indium oxide was realized by adjusting the thickness, which provided a good basis for the selenization of oxide films.

quote

GB/T 7714-2015 [1] Bingjie Liao, Honglie Shen, Hongyan Zhu, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.2c01571.
MLA [1] Bingjie Liao, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.2c01571.
APA [1] Bingjie Liao, Honglie Shen, Hongyan Zhu, Boxiang Gao, Zehui Wang, Jingzhe Zhang, Weibiao Mao, Yufang Li, & Tianru Wu. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.2c01571
IEEE [1] Bingjie Liao, Honglie Shen, Hongyan Zhu, Boxiang Gao, Zehui Wang, Jingzhe Zhang, Weibiao Mao, Yufang Li, and Tianru Wu, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.2c01571. keywords: {In2O3 films thicknesscontrollable printed oxide skin of liquid metals In2Se3 films metal residues}