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Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN AITranslate

Jingmin Tang; Soichiro Takeuchi; Masaki Tanaka; Hiroto Tomita; Yusuke Hashimoto; Takahiro Nagata; Jun Chen; Takuo Ohkochi; Yoshinori Kotani; Tomohiro Matsushita; Yoshiyuki Yamashita
Japan|Nara Institute of Science and Technology (NAIST); Kyushu University; Kyushu University; Kyushu University; Kyushu University;Nara Institute of Science and Technology (NAIST);Nara Institute of Science and Technology (NAIST);Nara Institute of Science and Technology (NAIST);Japan Synchrotron Radiation Research Institute (JASRI); Japan|Japan Synchrotron Radiation Research Institute (JASRI); Japan|Nara Institute of Science and Technology (NAIST)
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Publisher: ACS
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Abstract AITranslate

We employed photoelectron spectroscopy (PES) and photoelectron holography (PEH) to clarify the atomic structures and chemical states in the active and inactive dopant states of Mg-doped GaN. Due to the lack of available direct evidence, this has been a controversial issue. From PES, we found that two chemical states existed in the Mg-doped GaN: One is an active dopant state, and the other is an inactive state. We employed PEH to investigate the two observed chemical states, indicating that the active state could be attributed to a Mg atom substituting a Ga atom in the Mg-doped GaN structure (MgGa). The inactive state, on the other hand, was considered to be a disordered structure, an amorphous structure, defects, and/or MgGa bonding with a H atom in that structure.

KeyWords AITranslate

GaN Mgdoped GaN photoelectron hologram reconstructed 3D active and inactive
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c00912

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Citation Information:

We employed photoelectron spectroscopy (PES) and photoelectron holography (PEH) to clarify the atomic structures and chemical states in the active and inactive dopant states of Mg-doped GaN. Due to the lack of available direct evidence, this has been a controversial issue. From PES, we found that two chemical states existed in the Mg-doped GaN: One is an active dopant state, and the other is an inactive state. We employed PEH to investigate the two observed chemical states, indicating that the active state could be attributed to a Mg atom substituting a Ga atom in the Mg-doped GaN structure (MgGa). The inactive state, on the other hand, was considered to be a disordered structure, an amorphous structure, defects, and/or MgGa bonding with a H atom in that structure.

quote

GB/T 7714-2015 [1] Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00912.
MLA [1] Jingmin Tang, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00912.
APA [1] Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, & Yoshiyuki Yamashita. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00912
IEEE [1] Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, and Yoshiyuki Yamashita, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00912. keywords: {GaN Mgdoped GaN photoelectron hologram reconstructed 3D active and inactive}