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Enhanced Polarization Effect of Flexible Magnetoelectric PVDF-TrFE/Fe3O4 Smart Nanocomposites for Nonvolatile Memory Application Enhanced Polarization Effect of Flexible Magnetoelectric PVDF-TrFE/Fe3O4 Smart Nanocomposites for Nonvolatile Memory Application AITranslate

JiaWei Zhang; Xuan Meng; Geng Fu; Tao Han; Fan Xu; Chatchai Putson; Xiaoxu Liu
Xi’an University of Technology; Xi’an University of Technology; Xi’an University of Technology; Xi’an University of Technology; Xi’an University of Technology; Prince of Songkla University (PSU); Shaanxi University of Science and Technology
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Publisher: ACS
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Abstract AITranslate

High power consumption of nonvolatile memory is a major challenge, as it reduces the memory efficiency of information storage devices. The magnetoelectric (ME) coupling in multiferroic nanocomposites, which can be utilized in magnetoelectric random access memory, is an effective approach to reduce power consumption in information storage. Here, a type of ME nanocomposite embedded with 0.5 wt % Fe3O4 is presented, exhibiting higher ME voltage coefficients for piezoelectric thin films. Specifically, the ME voltage coefficient of the P(VDF-TrFE)/Fe3O4 composite developed in this study is 8.97 mV/(cm·Oe), which is 17.5% higher compared to that of the pure P(VDF-TrFE) at a Hdc of 1000 Oe. Meanwhile, the enhanced ME effect of smart nanocomposites is characterized by the increase of diffraction peak intensity at a microscopic level. The nanocomposite films exhibit high ME voltage coefficients and information storage performance, providing a great potential for creating next-generation memory devices in the realm of artificial intelligence and wearable devices.

KeyWords AITranslate

magnetoelectric nonvolatile memory nanocomposite polarization magnetoelectric coupling
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.3c00057

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Citation Information:

High power consumption of nonvolatile memory is a major challenge, as it reduces the memory efficiency of information storage devices. The magnetoelectric (ME) coupling in multiferroic nanocomposites, which can be utilized in magnetoelectric random access memory, is an effective approach to reduce power consumption in information storage. Here, a type of ME nanocomposite embedded with 0.5 wt % Fe3O4 is presented, exhibiting higher ME voltage coefficients for piezoelectric thin films. Specifically, the ME voltage coefficient of the P(VDF-TrFE)/Fe3O4 composite developed in this study is 8.97 mV/(cm·Oe), which is 17.5% higher compared to that of the pure P(VDF-TrFE) at a Hdc of 1000 Oe. Meanwhile, the enhanced ME effect of smart nanocomposites is characterized by the increase of diffraction peak intensity at a microscopic level. The nanocomposite films exhibit high ME voltage coefficients and information storage performance, providing a great potential for creating next-generation memory devices in the realm of artificial intelligence and wearable devices.

quote

GB/T 7714-2015 [1] JiaWei Zhang, Xuan Meng, Geng Fu, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00057.
MLA [1] JiaWei Zhang, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00057.
APA [1] JiaWei Zhang, Xuan Meng, Geng Fu, Tao Han, Fan Xu, Chatchai Putson, & Xiaoxu Liu. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00057
IEEE [1] JiaWei Zhang, Xuan Meng, Geng Fu, Tao Han, Fan Xu, Chatchai Putson, and Xiaoxu Liu, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00057. keywords: {magnetoelectric nonvolatile memory nanocomposite polarization magnetoelectric coupling}