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Synthesis of Two-Dimensional Hexagonal Boron Nitride and Mid-Infrared Nanophotonics AITranslate

Harbin Institute of Technology; Harbin Institute of Technology; Tianjin Institute of Power Sources; Harbin Institute of Technology; Harbin Institute of Technology; Harbin Institute of Technology; Harbin Institute of Technology; Harbin Institute of Technology
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Publisher: ACS
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Abstract AITranslate

Two-dimensional hexagonal boron nitride (2D h-BN), a representative of 2D layered materials with unique structure and properties, is one of the most promising inorganic nanomaterials in recent years. The excellent properties of h-BN in the mid-infrared (MIR) region (∼2–20 μm) have also received much attention. At the same time, with the advancement of materials exploration and device-on-chip integrated systems, the synthesis of high-quality h-BN has encountered great challenges, which is a prerequisite for the application of h-BN in the MIR region. In this paper, we first review the recent advances in 2D h-BN synthesis by highlighting the research, advantages and disadvantages of various synthesis methods, and the critical issues encountered so far. Then, advances in the study and application of h-BN in the MIR region are explored, including perfect absorption, photodetectors, electro-optical modulators, phonon polaritons, and plasma excitons. Finally, we present our views on the challenges encountered in the synthesis and application of 2D h-BN in the MIR region in the near future in the context of the article’s discussion and the potential of h-BN development, with the hope this review will be of some help to relevant researchers.

KeyWords AITranslate

2D hexagonal boron nitride synthesis midinfrared polaritons photoelectric device
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Basic Information:

DOI:https://doi.org/10.1021/acsaelm.2c01083

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Citation Information:

Two-dimensional hexagonal boron nitride (2D h-BN), a representative of 2D layered materials with unique structure and properties, is one of the most promising inorganic nanomaterials in recent years. The excellent properties of h-BN in the mid-infrared (MIR) region (∼2–20 μm) have also received much attention. At the same time, with the advancement of materials exploration and device-on-chip integrated systems, the synthesis of high-quality h-BN has encountered great challenges, which is a prerequisite for the application of h-BN in the MIR region. In this paper, we first review the recent advances in 2D h-BN synthesis by highlighting the research, advantages and disadvantages of various synthesis methods, and the critical issues encountered so far. Then, advances in the study and application of h-BN in the MIR region are explored, including perfect absorption, photodetectors, electro-optical modulators, phonon polaritons, and plasma excitons. Finally, we present our views on the challenges encountered in the synthesis and application of 2D h-BN in the MIR region in the near future in the context of the article’s discussion and the potential of h-BN development, with the hope this review will be of some help to relevant researchers.

quote

GB/T 7714-2015 [1] Ningqiang Shi, Ling Li, Peng Gao, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.2c01083.
MLA [1] Ningqiang Shi, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.2c01083.
APA [1] Ningqiang Shi, Ling Li, Peng Gao, Xiangqian Jiang, Jiandong Hao, Chuncheng Ban, Ruigeng Zhang, & Zhenxing Liu. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.2c01083
IEEE [1] Ningqiang Shi, Ling Li, Peng Gao, Xiangqian Jiang, Jiandong Hao, Chuncheng Ban, Ruigeng Zhang, and Zhenxing Liu, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.2c01083. keywords: {2D hexagonal boron nitride synthesis midinfrared polaritons photoelectric device}