In Situ Mapping of the Vectorial Electric Field within a Nanocrystal-Based Focal Plane Array Using Photoemission Microscopy In Situ Mapping of the Vectorial Electric Field within a Nanocrystal-Based Focal Plane Array Using Photoemission Microscopy AITranslate
Abstract AITranslate
Within a few years, nanocrystal-based infrared devices have achieved significant progress and advancements, including high-quality imaging systems. This raises the need to develop tools that can probe the active material of the device in situ and in operando to gain a deeper understanding of their operation beyond the overall response of the device. Here, we investigate a short-wave infrared imager based on HgTe nanocrystals with photoconductive operation, which now proposes imaging at wavelengths beyond the traditional InGaAs technology. We demonstrate that we can use photoemission microscopy to probe the energy landscape of this imaging array. Finally, we further use the high spatial resolution of the method to get access to the vectorial distribution of the electric field.
KeyWords AITranslate
Basic Information:
DOI:https://doi.org/10.1021/acsaelm.3c00609
Chinese Library Classification Number:
Citation Information:
Within a few years, nanocrystal-based infrared devices have achieved significant progress and advancements, including high-quality imaging systems. This raises the need to develop tools that can probe the active material of the device in situ and in operando to gain a deeper understanding of their operation beyond the overall response of the device. Here, we investigate a short-wave infrared imager based on HgTe nanocrystals with photoconductive operation, which now proposes imaging at wavelengths beyond the traditional InGaAs technology. We demonstrate that we can use photoemission microscopy to probe the energy landscape of this imaging array. Finally, we further use the high spatial resolution of the method to get access to the vectorial distribution of the electric field.
quote
| GB/T 7714-2015 | [1] Adrien Khalili, Mariarosa Cavallo, Erwan Bossavit, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00609. |
| MLA | [1] Adrien Khalili, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00609. |
| APA | [1] Adrien Khalili, Mariarosa Cavallo, Erwan Bossavit, Rodolphe Alchaar, Tung Huu Dang, Corentin Dabard, Huichen Zhang, Nicolas Ledos, Victor Parahyba, Pierre Potet, James K. Utterback, Yoann Prado, Mathieu G. Silly, Pavel Dudin, Jose Avila, Debora Pierucci, & Emmanuel Lhuillier. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00609 |
| IEEE | [1] Adrien Khalili, Mariarosa Cavallo, Erwan Bossavit, Rodolphe Alchaar, Tung Huu Dang, Corentin Dabard, Huichen Zhang, Nicolas Ledos, Victor Parahyba, Pierre Potet, James K. Utterback, Yoann Prado, Mathieu G. Silly, Pavel Dudin, Jose Avila, Debora Pierucci, and Emmanuel Lhuillier, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00609. keywords: {infrared HgTe imaging photoemission microscopy} |
