Self-Powered Ultraviolet–Visible Transparent Photodetector Based on Mo-Doped BiVO4 Thin Films Self-Powered Ultraviolet–Visible Transparent Photodetector Based on Mo-Doped BiVO4 Thin Films AITranslate
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Till now, BiVO4 has been extensively investigated for photoelectrochemical cell applications; however, the efficacy of BiVO4 in the photodetector (PD) and photovoltaic field is still challenging due to its poor absorption ability, conductivity, and high recombination rate. Keeping these issues in mind, herein, we report a co-sputtered Mo-doped (Mo:BiVO4) thin films-based self-powered ultraviolet (UV)–visible transparent PD (TPD) with a high photo-to-dark current ratio value of 1.2 × 103 and a detectivity value of 4.1 × 1010 Jones. Mo:BiVO4-based self-powered TPD devices show a fast response speed with a value of 3.5 ms. Moreover, the fabricated TPD devices show a clear photovoltaic photoresponse with an average visible transparency value of 65%. The highest obtained open-circuit voltage value is about 300 mV with a short-circuit current density value of 2.53 mA/cm2 under visible illumination along with an onsite power production value of 44 μW. Developed Mo:BiVO4-based TPD devices explore the suitability of BiVO4 in the transparent optoelectronics and onsite power generation field for the future.
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DOI：https://doi.org/10.1021/acsaelm.3c00610
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Till now, BiVO4 has been extensively investigated for photoelectrochemical cell applications; however, the efficacy of BiVO4 in the photodetector (PD) and photovoltaic field is still challenging due to its poor absorption ability, conductivity, and high recombination rate. Keeping these issues in mind, herein, we report a co-sputtered Mo-doped (Mo:BiVO4) thin films-based self-powered ultraviolet (UV)–visible transparent PD (TPD) with a high photo-to-dark current ratio value of 1.2 × 103 and a detectivity value of 4.1 × 1010 Jones. Mo:BiVO4-based self-powered TPD devices show a fast response speed with a value of 3.5 ms. Moreover, the fabricated TPD devices show a clear photovoltaic photoresponse with an average visible transparency value of 65%. The highest obtained open-circuit voltage value is about 300 mV with a short-circuit current density value of 2.53 mA/cm2 under visible illumination along with an onsite power production value of 44 μW. Developed Mo:BiVO4-based TPD devices explore the suitability of BiVO4 in the transparent optoelectronics and onsite power generation field for the future.
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| GB/T 7714-2015 | [1] Shuvaraj Ghosh, Malkeshkumar Patel, Chanhyuk Choi, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00610. |
| MLA | [1] Shuvaraj Ghosh, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00610. |
| APA | [1] Shuvaraj Ghosh, Malkeshkumar Patel, Chanhyuk Choi, Junghyun Lee, & Joondong Kim. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00610 |
| IEEE | [1] Shuvaraj Ghosh, Malkeshkumar Patel, Chanhyuk Choi, Junghyun Lee, and Joondong Kim, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00610. keywords: {selfpowered photodetector transparent photodetector (TPD) Modoped BiVO4 thin film photovoltaic} |