Effects of Sputtering Pressure on Performance of WO_3 Thin Film Electrochromic Devices AITranslate

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Chinese Library Classification Number:TB383.2[一般工业技术—材料科学与工程]

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WO3and TiO2 thin films were prepared on ITO coated glass substrate by DC magnetron sputtering with sputtering pressure as the variable.And then Li+polymer electrolyte was coated between the two films to assemble solid state electrochromic devices.Phase composition and surface morphology of WO3 thin film were characterized by XRD and AFM.Electrochromic performance of the devices was investigated with DC regulated power supply,and their colored/bleached state transmittance of visible light was determined by spectrophotometer.The results indicate that WO3 film deposited at 1.5Pa contains W metal.Amorphous state WO3 film is achieved at the sputtering pressure of 2.0~3.0Pa.WO3 film deposited at 2.0Pa has long and narrow particle clusters distributed on the surface and relatively large surface area benefiting injection/ejection of Li+and electron during coloration/bleaching,and thus its packaged device achieves the largest modulation amplitude and the fastest response.As sputtering pressure increasing,WO3 films have more surface defects resulting in the electrochromic performance of the devices worsened.