In situ Thermoreflectance Characterization of Thermal Resistance in Multilayer Electronics Packaging In situ Thermoreflectance Characterization of Thermal Resistance in Multilayer Electronics Packaging AITranslate

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DOI：https://doi.org/10.1021/acsaelm.1c01239

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High-performance, high-reliability microelectronic devices are essential for many applications. Thermal management is required to ensure that the temperature of semiconductor devices remains in a safe operating range. Advanced materials, such as silver-sintered die attach (the bond layer between the semiconductor die and the heat sink) and metal-diamond composite heat sinks, are being developed for this purpose. These are typically multilayered structures, with individual layer thicknesses ranging from tens of micrometers to millimeters. The effective thermal conductivity of individual layers likely differs from their bulk values due to interface effects and potential material imperfections. A method is needed to characterize the thermal resistance of these structures at the design optimization stage to understand what effect non-idealities may have on the final packaged device temperature. We have adapted the frequency-domain thermoreflectance technique to measure at low frequencies, from 10 Hz to 10 kHz, enabling multiple layers to be probed at depths from tens of micrometers to millimeters, which is tailored to assess novel device packaging and heat sinks. This is demonstrated by measuring the thermal resistance of a sintered silver die attach.