Study on Ni-Si Wafer Bonding Process Based on Ar Plasma Surface Activation AITranslate
Abstract AITranslate
Wafer surface was activated with Ar plasma, and then Ni-Si wafer bonding was carried out. The effects of gas flow and reactive ion etching power during surface activation on wafer bonding were investigated. The images of scanning acoustic microscopy were applied for assessing the quality of wafer bonding. The results show that holes and bubbles on the bonding interface can be reduced by surface plasma activation to efficiently improve the quality of wafer bonding.
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Basic Information:
DOI：
Chinese Library Classification Number:TN305[电子电信—物理电子学]
Citation Information:
Wafer surface was activated with Ar plasma, and then Ni-Si wafer bonding was carried out. The effects of gas flow and reactive ion etching power during surface activation on wafer bonding were investigated. The images of scanning acoustic microscopy were applied for assessing the quality of wafer bonding. The results show that holes and bubbles on the bonding interface can be reduced by surface plasma activation to efficiently improve the quality of wafer bonding.
quote
| GB/T 7714-2015 | [1] XU Wei, WANG Sheng-kai, LIU Hong-gang. Study on Ni-Si Wafer Bonding Process Based on Ar Plasma Surface Activation[J]. Rare Metals and Cemented Carbides, 2017(3): 56-58. |
| MLA | [1] XU Wei, et al., "Study on Ni-Si Wafer Bonding Process Based on Ar Plasma Surface Activation." Rare Metals and Cemented Carbides, no. 3, 2017, pp. 56-58. |
| APA | [1] XU Wei, WANG Sheng-kai, & LIU Hong-gang. (2017). Study on Ni-Si Wafer Bonding Process Based on Ar Plasma Surface Activation. Rare Metals and Cemented Carbides(3), 56-58. |
| IEEE | [1] XU Wei, WANG Sheng-kai, and LIU Hong-gang, "Study on Ni-Si Wafer Bonding Process Based on Ar Plasma Surface Activation," Rare Metals and Cemented Carbides, no. 3, pp. 56-58, 2017. keywords: {wafer bonding;reactive bonding;Ni-Si bonding;surface activation;Ar plasma} |