Heterojunction MoS2@VO2 Microspheres for Electromagnetic Wave Absorption in the X-Band Heterojunction MoS2@VO2 Microspheres for Electromagnetic Wave Absorption in the X-Band AITranslate

Basic Information:

DOI：https://doi.org/10.1021/acsaelm.3c01155

Chinese Library Classification Number:

Citation Information:

The development of core–shell structural composites with specific frequency band absorption properties is a means to effectively improve the performance and use of wave absorbers. Herein, core–shell structural MoS2@VO2 composites with semiconductor heterojunctions were designed by a multistep hydrothermal method using an interface engineering strategy. After analysis of the material crystal information, epitaxial element information, microscopic morphology structure information, and electromagnetic wave parameter information, the MoS2@VO2 composite has a good chemical bonding state, and its morphology meets expectations. The prepared MoS2@VO2 composites have various loss pathways for electromagnetic waves. The MoS2@VO2 composite achieves a minimum reflection loss of −56.78 dB, and the absorption band covers the whole X-band. The electromagnetic wave absorption properties of this material were improved by the construction of semiconductor heterojunctions, the introduction of a large number of phase interfaces, and the design of special hollow and core–shell structures. This work can provide a strategy for the application of semiconductor-based composite functional materials in the field of electromagnetic wave absorption.