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Spatially Resolved Investigation of the Bandgap Variation across a β-(AlxGa1–x)2O3/β-Ga2O3 Interface by STEM–VEELS Spatially Resolved Investigation of the Bandgap Variation across a β-(AlxGa1–x)2O3/β-Ga2O3 Interface by STEM–VEELS AITranslate

Adrian Chmielewski; Ziling Deng; Parivash Moradifar; Leixin Miao; Yuewei Zhang; Akhil Mauze; Kleyser A. Lopez; Wolfgang Windl; Nasim Alem
University Park 16802; The Ohio State University; University Park 16802; University Park 16802; University of California Santa Barbara; University of California Santa Barbara; University Park 16802; The Ohio State University; University Park 16802
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Publisher: ACS
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Abstract AITranslate

Alloying β-(AlxGa1–x)2O3 on a β-Ga2O3 substrate results in a heterojunction with a tunable bandgap, but is often plagued by defects in the interface region. In this work, using valence electron energy loss spectroscopy combined with density functional theory calculations, we identify a high concentration of cation interstitials at a β-(Al0.2Ga0.8)2O3/β-Ga2O3 interface and measure the optical absorption edge. We find a dip in the band edge of 0.1 eV depth and a width of around 15 nm on the β-Ga2O3 side of the interface with signs of noticeable electron probe delocalization broadening and discuss defect states versus excitons as its possible origins.

KeyWords AITranslate

ultrawidebandgap betagalliumoxide TEM EELS point defects interstitials
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.1c00824

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Citation Information:

Alloying β-(AlxGa1–x)2O3 on a β-Ga2O3 substrate results in a heterojunction with a tunable bandgap, but is often plagued by defects in the interface region. In this work, using valence electron energy loss spectroscopy combined with density functional theory calculations, we identify a high concentration of cation interstitials at a β-(Al0.2Ga0.8)2O3/β-Ga2O3 interface and measure the optical absorption edge. We find a dip in the band edge of 0.1 eV depth and a width of around 15 nm on the β-Ga2O3 side of the interface with signs of noticeable electron probe delocalization broadening and discuss defect states versus excitons as its possible origins.

quote

GB/T 7714-2015 [1] Adrian Chmielewski, Ziling Deng, Parivash Moradifar, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.1c00824.
MLA [1] Adrian Chmielewski, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.1c00824.
APA [1] Adrian Chmielewski, Ziling Deng, Parivash Moradifar, Leixin Miao, Yuewei Zhang, Akhil Mauze, Kleyser A. Lopez, Wolfgang Windl, & Nasim Alem. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.1c00824
IEEE [1] Adrian Chmielewski, Ziling Deng, Parivash Moradifar, Leixin Miao, Yuewei Zhang, Akhil Mauze, Kleyser A. Lopez, Wolfgang Windl, and Nasim Alem, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.1c00824. keywords: {ultrawidebandgap betagalliumoxide TEM EELS point defects interstitials}