Linear Weight Update and Large Synaptic Responses in Neuromorphic Devices Comprising Pulsed-Laser-Deposited BiFeO3 Linear Weight Update and Large Synaptic Responses in Neuromorphic Devices Comprising Pulsed-Laser-Deposited BiFeO3 AITranslate

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DOI：https://doi.org/10.1021/acsaelm.1c00958

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We report the synaptic responses of neuromorphic devices fabricated using bismuth ferrite (BiFeO3; BFO) thin films deposited by pulsed laser deposition (PLD). These devices exhibit a large excitatory postsynaptic current (EPSC) with linear synaptic weight update for potentiation. The long-term depression (LTD) curve shows that the depression has two relaxation timescales, which we assign to the ionic relaxation and dielectric polarization of the BFO film. The spike-time-dependent plasticity (STDP) of the device shows Hebbian associative learning characteristics, which will be helpful for unsupervised learning in artificial intelligence applications. The nonlinearity factor (NLF) for the weight update of the potentiation is <0.01, and for depression, it is 5.1, which indicates that more than 95% accuracy can be achieved for applications such as pattern recognition using these synaptic devices.