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Heteroepitaxial Growth, Degenerate State, and Superconductivity of Perovskite-Type LaWN3 Thin Films Heteroepitaxial Growth, Degenerate State, and Superconductivity of Perovskite-Type LaWN3 Thin Films AITranslate

Tokyo Institute of Technology; Tokyo Institute of Technology
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Publisher: ACS
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Abstract AITranslate

LaWN3 epitaxial thin films were successfully grown on α-Al2O3 (0001) substrates with a multi-cathode radio frequency magnetron sputtering gun system using metal targets and nitrogen gas. A high substrate temperature (>1000 °C) was a key requirement for heteroepitaxial growth, and the optimum substrate temperature, in terms of crystallinity, was determined to be 1125 °C at the optimized cathode power densities. The epitaxial film did not exhibit ferroelectricity, which has been predicted by first-principles calculations; however, n-type degenerate semiconducting behaviors were observed together with a high electron density of 1.9 × 1022 cm–3 and an enlarged optical band gap of 1.83 eV, owing to band-filling. Furthermore, superconductivity was observed at 0.73 K. The degenerate state and superconductivity originate from unavoidable off-stoichiometry in the films. Thus, alternative growth processes that achieve a higher nitrogen chemical potential are necessary to decrease the carrier density and allow for the emergence of the ferroelectric properties.

KeyWords AITranslate

nitride perovskite sputtering ferroelectric semiconductor degenerate semiconductor free carrier absorption
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Basic Information:

DOI:https://doi.org/10.1021/acsaelm.3c00249

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Citation Information:

LaWN3 epitaxial thin films were successfully grown on α-Al2O3 (0001) substrates with a multi-cathode radio frequency magnetron sputtering gun system using metal targets and nitrogen gas. A high substrate temperature (>1000 °C) was a key requirement for heteroepitaxial growth, and the optimum substrate temperature, in terms of crystallinity, was determined to be 1125 °C at the optimized cathode power densities. The epitaxial film did not exhibit ferroelectricity, which has been predicted by first-principles calculations; however, n-type degenerate semiconducting behaviors were observed together with a high electron density of 1.9 × 1022 cm–3 and an enlarged optical band gap of 1.83 eV, owing to band-filling. Furthermore, superconductivity was observed at 0.73 K. The degenerate state and superconductivity originate from unavoidable off-stoichiometry in the films. Thus, alternative growth processes that achieve a higher nitrogen chemical potential are necessary to decrease the carrier density and allow for the emergence of the ferroelectric properties.

quote

GB/T 7714-2015 [1] Kota Hanzawa, Hidenori Hiramatsu. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00249.
MLA [1] Kota Hanzawa, and Hidenori Hiramatsu. ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00249.
APA [1] Kota Hanzawa, & Hidenori Hiramatsu. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00249
IEEE [1] Kota Hanzawa and Hidenori Hiramatsu, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00249. keywords: {nitride perovskite sputtering ferroelectric semiconductor degenerate semiconductor free carrier absorption}