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Field-Free SOT-Switching Based on a Vertical Composition Gradient of Ferrimagnetic Alloys Field-Free SOT-Switching Based on a Vertical Composition Gradient of Ferrimagnetic Alloys AITranslate

Hubei University; Wuhan University; Hubei University; Hubei University; Hubei University;Songshan Lake Materials Laboratory; China University of Geosciences; Wuhan University; Huazhong University of Science and Technology; Huazhong University of Science and Technology; China University of Geosciences;Songshan Lake Materials Laboratory; Hubei University
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Publisher: ACS
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Abstract AITranslate

Reproducible field-free spin–orbit torque (SOT)-driven perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the perpendicular magnetization of bulk-symmetric monolayer ferromagnetic films cannot be switched directly by the current-induced SOT. An additional auxiliary in-plane magnetic field is required to realize deterministic switching, which is unfavorable for device applications. Here, we break the bulk-center symmetry of CoTb alloy films by introducing a vertical composition gradient of heavy metal Pt, and we thus achieve the field-free SOT switching. The experimental results also show that the vertical composition gradient of Pt in the magnetic layer induces an out-of-plane effective field, and the magnitude of this effective field is proportional to the Pt vertical composition gradient. The data also revealed the presence of the multilevel resistance state, which is consistent with the requirements of artificially intelligent neuro-synapses. This field-free multilevel resistive state provides a way for the design of resistive elements of neural network structures.

KeyWords AITranslate

spin−orbit torque composition gradient magnetic field fieldfree SOT switching neural networks magnetization switching
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Basic Information:

DOI:https://doi.org/10.1021/acsaelm.3c00429

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Citation Information:

Reproducible field-free spin–orbit torque (SOT)-driven perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the perpendicular magnetization of bulk-symmetric monolayer ferromagnetic films cannot be switched directly by the current-induced SOT. An additional auxiliary in-plane magnetic field is required to realize deterministic switching, which is unfavorable for device applications. Here, we break the bulk-center symmetry of CoTb alloy films by introducing a vertical composition gradient of heavy metal Pt, and we thus achieve the field-free SOT switching. The experimental results also show that the vertical composition gradient of Pt in the magnetic layer induces an out-of-plane effective field, and the magnitude of this effective field is proportional to the Pt vertical composition gradient. The data also revealed the presence of the multilevel resistance state, which is consistent with the requirements of artificially intelligent neuro-synapses. This field-free multilevel resistive state provides a way for the design of resistive elements of neural network structures.

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GB/T 7714-2015 [1] Guang Zeng, Yao Wen, Chuangwen Wu, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00429.
MLA [1] Guang Zeng, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00429.
APA [1] Guang Zeng, Yao Wen, Chuangwen Wu, Chuantong Ren, Dequan Meng, Jing Zhang, Wendi Li, Hao Wang, Wei Luo, Yue Zhang, Kaifeng Dong, Hao Wu, & Shiheng Liang. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00429
IEEE [1] Guang Zeng, Yao Wen, Chuangwen Wu, Chuantong Ren, Dequan Meng, Jing Zhang, Wendi Li, Hao Wang, Wei Luo, Yue Zhang, Kaifeng Dong, Hao Wu, and Shiheng Liang, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00429. keywords: {spin−orbit torque composition gradient magnetic field fieldfree SOT switching neural networks magnetization switching}