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Negative Poisson`s ratio in monolayer PdSe2 AITranslate

Beijing University of Posts and Telecommunications; Beijing University of Posts and Telecommunications; Beijing University of Posts and Telecommunications; Beijing University of Posts and Telecommunications; Beijing University of Posts and Telecommunications
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Publisher: Elsevier
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Abstract AITranslate

Mechanical properties of the PdSe2 monolayer are calculated by using first-principles calculations. By adding uniaxial strain along x- and y-directions, our results show that the negative Poisson’s ratio (NPR) can be observed in the Two Dimensional (2D) puckered structure of PdSe2 monolayer. The occurrence of the NPR is directly caused by the fact that the decrease of Se-Se bond is larger than the increase of Se-Pd-Se bond when compressing the lattice along the x-direction. Our calculations exhibit that the electronic locality of Se-Se bond is strong and the orbit of the Se atom in the Se-Se bond has changed significantly. Consequently, our calculated results indicate that monolayer PdSe2 will have many potential applications in nanoelectronics and microelectromechanical devices. Graphical abstract Download : Download high-res image (181KB) Download : Download full-size image

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DOI:https://doi.org/10.1016/j.commatsci.2019.01.024

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Citation Information:

Mechanical properties of the PdSe2 monolayer are calculated by using first-principles calculations. By adding uniaxial strain along x- and y-directions, our results show that the negative Poisson’s ratio (NPR) can be observed in the Two Dimensional (2D) puckered structure of PdSe2 monolayer. The occurrence of the NPR is directly caused by the fact that the decrease of Se-Se bond is larger than the increase of Se-Pd-Se bond when compressing the lattice along the x-direction. Our calculations exhibit that the electronic locality of Se-Se bond is strong and the orbit of the Se atom in the Se-Se bond has changed significantly. Consequently, our calculated results indicate that monolayer PdSe2 will have many potential applications in nanoelectronics and microelectromechanical devices. Graphical abstract Download : Download high-res image (181KB) Download : Download full-size image

quote

GB/T 7714-2015 [1] Gang Liu, Qimiao Zeng, Pengfei Zhu, et al. Computational Materials Science, 2019(160). DOI:10.1016/j.commatsci.2019.01.024.
MLA [1] Gang Liu, et al., Computational Materials Science, no. 160, 2019, https://doi.org/10.1016/j.commatsci.2019.01.024.
APA [1] Gang Liu, Qimiao Zeng, Pengfei Zhu, Ruge Quhe, & Pengfei Lu. (2019). Computational Materials Science(160). https://doi.org/10.1016/j.commatsci.2019.01.024
IEEE [1] Gang Liu, Qimiao Zeng, Pengfei Zhu, Ruge Quhe, and Pengfei Lu, Computational Materials Science, no. 160, 2019, doi: 10.1016/j.commatsci.2019.01.024.