Graphene Nanoribbon Field-Effect Transistors with Top-Gate Polymer Dielectrics Graphene Nanoribbon Field-Effect Transistors with Top-Gate Polymer Dielectrics AITranslate

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DOI：https://doi.org/10.1021/acsaelm.2c00194

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Graphene nanoribbons (GNRs) have demonstrated great potential for nanoscale devices owing to their excellent electrical properties. However, the application of the GNRs in large-scale devices still remains elusive mainly due to the absence of facile, nonhazardous, and nondestructive transfer methods. Here, we develop a simple acid (HF)-free transfer method for fabricating field-effect transistors (FETs) with a monolayer composed of a random network of GNRs. A polymer layer that is typically used as mechanical support for transferring GNR films is utilized as the gate dielectric. The resultant GNR-FETs exhibit excellent FET characteristics with a large on/off switching current ratio of >104. The transfer process enables the demonstration of the first GNR-based nonvolatile memory. The process offers a simple route for GNRs to be utilized in various optoelectronic devices.