Control of Optical and Electrical Characteristics of BaxSn1–xO2–x Films with Bandgap Engineering as a Function of Ba:Sn Ratio Control of Optical and Electrical Characteristics of BaxSn1–xO2–x Films with Bandgap Engineering as a Function of Ba:Sn Ratio AITranslate
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Herein, we report bandgap engineering of alloyed BaxSn1–xO2–x (BSO) to modulate the optical and electrical properties as a function of Ba:Sn ratio. The BSO nanoparticles were synthesized at 50 °C and annealed at 200 °C. It was found that the bandgap and electron mobility of BSO films decrease with increasing the Ba content in BSO, indicating that the electron mobility of the BSO-based electron transport layers in optoelectronic devices can be easily controlled by adjusting the Ba:Sn ratio. The bandgap and electron mobility of BSO films ranged from 3.02 to 3.71 eV and from 5.2 × 10–3 to 9.8 × 10–3 cm2/V, respectively.
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DOI：https://doi.org/10.1021/acsaelm.3c00307
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Herein, we report bandgap engineering of alloyed BaxSn1–xO2–x (BSO) to modulate the optical and electrical properties as a function of Ba:Sn ratio. The BSO nanoparticles were synthesized at 50 °C and annealed at 200 °C. It was found that the bandgap and electron mobility of BSO films decrease with increasing the Ba content in BSO, indicating that the electron mobility of the BSO-based electron transport layers in optoelectronic devices can be easily controlled by adjusting the Ba:Sn ratio. The bandgap and electron mobility of BSO films ranged from 3.02 to 3.71 eV and from 5.2 × 10–3 to 9.8 × 10–3 cm2/V, respectively.
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| GB/T 7714-2015 | [1] Zheyu Zhang, Tahmineh Mahmoudi, Yeon Ho Im, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00307. |
| MLA | [1] Zheyu Zhang, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00307. |
| APA | [1] Zheyu Zhang, Tahmineh Mahmoudi, Yeon Ho Im, & YoonBong Hahn. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00307 |
| IEEE | [1] Zheyu Zhang, Tahmineh Mahmoudi, Yeon Ho Im, and YoonBong Hahn, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00307. keywords: {Alloyed BaxSn1−xO2−x Electrontransport material;Bandgap engineering Bandgap energy Electron mobility} |