Tubular Diamond as an Efficient Electron Field Emitter Tubular Diamond as an Efficient Electron Field Emitter AITranslate
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Herein, we present a straightforward and cost-effective procedure for producing conductive diamond tubes on the surface of porous carbon nanotube hollow fibers using successive 10-pulsed laser annealing shots and 6 h of hot filament chemical vapor deposition techniques. Room-temperature Raman and X-ray diffraction spectra reveal the signature T2g peaks near 1332.4 cm–1 and 111 planes of diamonds near 43.9°, respectively. A low turn-on field (ETO) ∼1.85 V/μm@1 μA/cm2 and a threshold field (ETH) ∼2.54 V/μm@10 μA/cm2 were observed for the tubular diamond structures. The field enhancement factor (β) was calculated at 3594 and highly stable field emission current stability was observed over a long period of 4 h. For the first time, a good insight into the field emission results of the diamond is established with the structural, electronic properties, and the work function (φ) ∼4.84 eV analysis conducted by the density functional theory simulation. Finite electronic states at the Fermi level are observed beyond a band gap, and it demonstrates the wide-band gap (4.4 eV) semiconducting nature of the diamond. The Bader charge analysis and maximum entropy method pattern revealed the negative electron affinity of the diamond, and it is responsible for the emission of electrons from the conduction band of the diamond. Besides, the accumulation of charge carriers, which contributes to the electric field emission, takes place due to the weak π bonds of carbon atoms. The low turn-on field, the high field enhancement factor, and the good field emission current stability of tubular diamond offer great prospects for future efficient and low-cost field emission devices.
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DOI:https://doi.org/10.1021/acsaelm.3c00317
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Herein, we present a straightforward and cost-effective procedure for producing conductive diamond tubes on the surface of porous carbon nanotube hollow fibers using successive 10-pulsed laser annealing shots and 6 h of hot filament chemical vapor deposition techniques. Room-temperature Raman and X-ray diffraction spectra reveal the signature T2g peaks near 1332.4 cm–1 and 111 planes of diamonds near 43.9°, respectively. A low turn-on field (ETO) ∼1.85 V/μm@1 μA/cm2 and a threshold field (ETH) ∼2.54 V/μm@10 μA/cm2 were observed for the tubular diamond structures. The field enhancement factor (β) was calculated at 3594 and highly stable field emission current stability was observed over a long period of 4 h. For the first time, a good insight into the field emission results of the diamond is established with the structural, electronic properties, and the work function (φ) ∼4.84 eV analysis conducted by the density functional theory simulation. Finite electronic states at the Fermi level are observed beyond a band gap, and it demonstrates the wide-band gap (4.4 eV) semiconducting nature of the diamond. The Bader charge analysis and maximum entropy method pattern revealed the negative electron affinity of the diamond, and it is responsible for the emission of electrons from the conduction band of the diamond. Besides, the accumulation of charge carriers, which contributes to the electric field emission, takes place due to the weak π bonds of carbon atoms. The low turn-on field, the high field enhancement factor, and the good field emission current stability of tubular diamond offer great prospects for future efficient and low-cost field emission devices.
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| GB/T 7714-2015 | [1] Subrata Karmakar, Pallab Kumar Sarkar, Chetan D. Mistari, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00317. |
| MLA | [1] Subrata Karmakar, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00317. |
| APA | [1] Subrata Karmakar, Pallab Kumar Sarkar, Chetan D. Mistari, Ravi Kumar Trivedi, Brahmananda Chakraborty, M. A. More, Ravi Droopad, & Ariful Haque. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00317 |
| IEEE | [1] Subrata Karmakar, Pallab Kumar Sarkar, Chetan D. Mistari, Ravi Kumar Trivedi, Brahmananda Chakraborty, M. A. More, Ravi Droopad, and Ariful Haque, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00317. keywords: {tubular diamond growth mechanism structural characterization field emission response density functional theory workfunctionShow More} |
