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The natural valence band offset of dilute GaAs1−xNx and GaAs: The first-principles approach AITranslate

Nanyang Technological University; Nanyang Technological University; Nanyang Technological University
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Publisher: Elsevier
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Abstract AITranslate

The unstrained “natural” valence band offsets of dilute GaAs1−xNx and GaAs are calculated using the first-principles method. For calculated the band offset, we fit the lattice constants and the elastic stiffness constants, C11, C12, and C44 of GaAs and GaAs1−xNx. The calculated results show that the natural valence band offset Δ E VBM ( GaAs 1 - x N x / GaAs ) > 0 is weak type-I when x is less than 5.56%, and the natural Δ E VBM ( GaAs 0.9583 N 0.0417 / GaAs ) is almost the same as the nature Δ E VBM ( GaAs 0.9722 N 0.0278 / GaAs ) . However, the natural valence band offset Δ E VBM ( GaAs 0.9167 N 0.0833 / GaAs ) < 0 is weak type-II.

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DOI:https://doi.org/10.1016/j.commatsci.2010.03.039

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Citation Information:

The unstrained “natural” valence band offsets of dilute GaAs1−xNx and GaAs are calculated using the first-principles method. For calculated the band offset, we fit the lattice constants and the elastic stiffness constants, C11, C12, and C44 of GaAs and GaAs1−xNx. The calculated results show that the natural valence band offset Δ E VBM ( GaAs 1 - x N x / GaAs ) > 0 is weak type-I when x is less than 5.56%, and the natural Δ E VBM ( GaAs 0.9583 N 0.0417 / GaAs ) is almost the same as the nature Δ E VBM ( GaAs 0.9722 N 0.0278 / GaAs ) . However, the natural valence band offset Δ E VBM ( GaAs 0.9167 N 0.0833 / GaAs ) < 0 is weak type-II.

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GB/T 7714-2015 [1] Qiang Xu, Weijun Fan, JerLai Kuo. Computational Materials Science, 2010(49). DOI:10.1016/j.commatsci.2010.03.039.
MLA [1] Qiang Xu, et al., Computational Materials Science, no. 49, 2010, https://doi.org/10.1016/j.commatsci.2010.03.039.
APA [1] Qiang Xu, Weijun Fan, & JerLai Kuo. (2010). Computational Materials Science(49). https://doi.org/10.1016/j.commatsci.2010.03.039
IEEE [1] Qiang Xu, Weijun Fan, and JerLai Kuo, Computational Materials Science, no. 49, 2010, doi: 10.1016/j.commatsci.2010.03.039.