Deep-UV Transparent Conducting Oxide La-Doped SrSnO3 with a High Figure of Merit Deep-UV Transparent Conducting Oxide La-Doped SrSnO3 with a High Figure of Merit AITranslate
Abstract AITranslate
Perovskite stannate SrSnO3 (SSO) is attracting attention as ultraviolet transparent conducting oxides (UV TCOs) due to its ultrawide band gap and high conductivity. Here, we investigate in detail the thickness-dependent electrical, structural, and optical properties of sequentially strain-relaxed La-doped SrSnO3 (SLSO) epitaxial thin films. We find that the SLSO films grow as an orthorhombic Pnma phase with a–a–c+ in the c+ direction under the tensile strain. With the strain relaxation, as the films become thicker, vertical grain boundaries are created and the orthorhombic phase becomes reoriented to all three possible orientations. Simultaneously, the conductance starts to deviate from the linear behavior with increasing film thickness. Through the analysis of thickness fringes in optical transmittance, we found that a 120 nm thick nominally 4% La-doped SrSnO3 film has a figure of merit (φTC = 2.65 × 10–3 Ω–1) at λ = 300 nm in the deep-UV region, which is the highest value among the well-known candidates for UV TCOs reported to date.
KeyWords AITranslate
Basic Information:
DOI:https://doi.org/10.1021/acsaelm.2c00581
Chinese Library Classification Number:
Citation Information:
Perovskite stannate SrSnO3 (SSO) is attracting attention as ultraviolet transparent conducting oxides (UV TCOs) due to its ultrawide band gap and high conductivity. Here, we investigate in detail the thickness-dependent electrical, structural, and optical properties of sequentially strain-relaxed La-doped SrSnO3 (SLSO) epitaxial thin films. We find that the SLSO films grow as an orthorhombic Pnma phase with a–a–c+ in the c+ direction under the tensile strain. With the strain relaxation, as the films become thicker, vertical grain boundaries are created and the orthorhombic phase becomes reoriented to all three possible orientations. Simultaneously, the conductance starts to deviate from the linear behavior with increasing film thickness. Through the analysis of thickness fringes in optical transmittance, we found that a 120 nm thick nominally 4% La-doped SrSnO3 film has a figure of merit (φTC = 2.65 × 10–3 Ω–1) at λ = 300 nm in the deep-UV region, which is the highest value among the well-known candidates for UV TCOs reported to date.
quote
| GB/T 7714-2015 | [1] Juhan Kim, Hwanhui Yun, Jihoon Seo, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00581. |
| MLA | [1] Juhan Kim, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00581. |
| APA | [1] Juhan Kim, Hwanhui Yun, Jihoon Seo, Jae Ha Kim, Jae Hoon Kim, K. Andre Mkhoyan, Bongju Kim, & Kookrin Char. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00581 |
| IEEE | [1] Juhan Kim, Hwanhui Yun, Jihoon Seo, Jae Ha Kim, Jae Hoon Kim, K. Andre Mkhoyan, Bongju Kim, and Kookrin Char, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00581. keywords: {ultraviolet transparent conducting oxides figure of merit Ladoped SrSnO3 ultrawide band gap semiconductors thicknessdependent properties} |
