Si-Integrated BaTiO3 for Electro-Optic Applications: Crystalline and Polarization Orientation Control Si-Integrated BaTiO3 for Electro-Optic Applications: Crystalline and Polarization Orientation Control AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00747

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Recent research has demonstrated that BaTiO3 epitaxially grown on Si is capable of a large electro-optical response via the Pockels effect crucial for fabricating efficient phase modulators in integrated silicon photonics. However, the typical crystallographic orientation evolution of epitaxial BaTiO3 on SrTiO3-buffered Si yields a dead layer (a region of the film with a low electro-optic response) for most device geometries. We report on a Si-on-insulator-integrated film stack incorporating a MgO buffer layer that effectively alleviates this problem. The film quality is confirmed with crystallographic characterization; electro-optic measurements yield an effective Pockels coefficient of 119 pm/V for a 100 nm thick film.