daohang fenxiangbox searchbox qikanlogonew daohangnew searchboxnew navrightzone footerzone paper

Research on Optical and Electrical Properties of BiFeO_3 /La0.5Gd0.17Sr0.33CoO_3 Heterojunction AITranslate

Department of Physics, College of Science, Xi'an Jiaotong University;Department of Physics, College of Science, Xi'an Jiaotong University
AITranslate
Publisher: Editorial Office of Rare Metals and Cemented Carbides
Share Citation Information Add to Favorites

    Scan to share on WeChat or Moments

Use WeChat scan.
Share with WeChat friends or Moments

Abstract AITranslate

The BiFeO3/La0.5Gd0.17Sr0.33CoO3 heterojunction was prepared by pulsed laser deposition on the LaAlO3 substrate, and its optical and electrical properties were investigated. The results show that the La0.3Gd0.17Sr0.33CoO3 film,with a smooth and homogeneous surface, can provide favorable conditions for the growth of BiFeO3 film. At the temperature above 200 K,the BiFeO3/La0.5Gd0.17Sr0.33CoO3 heterojunc- tion shows semiconductor properties, and its resistance decreases with the increase of temperature. The optical band gap of the heterojunction is 3. 543 eV,so it has photo induced carriers generated by UV laser irradiation at room temperature.

KeyWords AITranslate

BiFeO3/La0.5 Gd0.17 Sr0.33 CoO3 heterojunction optical and electrical property pulsed laser depos- ition method

1李英楠,李凤华,沈悦,樊占国,李成山,卢亚峰.MOD法在LaAlO_3单晶上沉积La_(0.4)Sr_(0.6)CoO_3导电缓冲层[J].稀有金属材料与工程,2011,40(4):685-688. 被引量:3

2A.Z. Sim?es,M.A.Ramirez,C.R. Foschini,F. Moura,J.A. Varela,E. Longo.Enhanced ferroelectric properties of La-substituted BiFeO 3 thin films on LaSrCoO 3 /Pt/TiO 2 /SiO 2 /Si (1<ce:hsp sp="0.25"/>0<ce:hsp sp="0.25"/>0) substrates prepared by the soft chemical method[J].Ceramics International.2012(5)

3Shih-Wei Chen,Jenn-Ming Wu.Unipolar resistive switching behavior of BiFeO 3 thin films prepared by chemical solution deposition[J].Thin Solid Films.2010(1)

4WeiJi,KuiYao,Yung C.Liang.Bulk Photovoltaic Effect at Visible Wavelength in Epitaxial Ferroelectric BiFeO<sub>3</sub> Thin Films[J].Adv Mater.2010(15)

5CHOI T,LEE S,CHOI Y J,et al.Switchable ferroelectric diode and photovoltaic effect in BiFeO3[].Science.2009

6Ederer C,Spaldin N A.Influence of strain and oxygen vacancies on the magnetoelectric properties of multiferroic bismuth ferrite[].Physical Review B Condensed Matter and Materials Physics.2005

7J. Wang,J. B. Neaton,H. Zheng,V. Nagarajan,S. B. Ogale,B. Liu,D. Viehl,V. Vaithyanathan,D. G. Schlom,U. V. Waghmare,N. A. Spaldin,K. M. Rabe,M. Wuttig,R. Rame.Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures[].Science.2003

8Qu, T.L.,Zhao, Y.G.,Xie, D.,Shi, J.P.,Chen, Q.P.,Ren, T.L.Resistance switching and white-light photovoltaic effects in BiFeO 3 /Nb- SrTiO 3 heterojunctions[].Applied Physics.2011

9Clarence Zener.Interaction between the d-Shells in the Transition Metals.II. Ferromagnetic Compounds of Manganese with Perovskite Structure[].Physical Review.1951

10Wang, G.S.,Meng, X.J.,Sun, J.L.,Lai, Z.Q.,Yu, J.,Guo, S.L.,Cheng, J.G.,Tang, J.,Chu, J.H.PbZr<sub>0.5</sub>Ti<sub>0.5</sub>O<sub>3</sub>/La<sub>0.5</sub> Sr<sub>0.5</sub>CoO<sub>3</sub> heterostructures prepared by chemical solution routes on silicon with no fatigue polarization[].Applied Physics.2001

1丁扣宝,胡莲君,张秀淼.电场增强载流子产生中产生电流与宽度的关系[J].微电子学,1995,25(6):56-58.

2杜军,陈景,吴小山,潘明虎,龙建国,张维,鹿牧,翟宏如,胡安.磁性隧道结Ni_(80)Fe_(20)/Al_2O_3/Co的研究[J].物理学报,1999,48(S1):236-243. 被引量:9

3刘丽峰,吕惠宾,戴守愚,陈正豪.巨磁电阻材料La_(0.9)Sr_(0.1)MnO_3与半导体Si组成的二极管的整流特性[J].物理学报,2005,54(5):2342-2345. 被引量:10

4王红霞,罗昌俊,阚芝兰,石大为,杨昌平.电化学沉积法制备Cu_2S薄膜及EPIR效应[J].平顶山学院学报,2013,28(5):39-43.

5贾宏志,简献忠,王文澄.紫外激光照射对硅酸铅玻璃薄膜吸收谱的影响[J].上海理工大学学报,2004,26(4):298-300.

6陈建勇,刘存业,陈志谦,徐庆宇,倪刚.磁性隧道结电阻与电流驱动相关性分析(英文)[J].西南师范大学学报:自然科学版,2002,27(6):896-900.

7贾宏志,王文澄.紫外激光照射对硅酸铅玻璃表面结构的影响[J].中国激光,2006,33(2):230-232. 被引量:4

8贾宏志,王文澄.紫外激光照射引起的硅酸铅玻璃结构的变化[J].光谱学与光谱分析,2006,26(9):1660-1663.

9丁扣宝,施红军,张秀淼.基于Ieda模型的产生区电流与产生区宽度的理论关系[J].杭州大学学报:自然科学版,1996,23(3):246-250.

10陈璟,杜军,吴小山,潘明虎,龙建国,张维,鹿牧,翟宏如,胡安.磁性隧道结Ni_(80)Fe_(20)/Al_2O_3/Co的制备和物性[J].物理,2000,29(1):5-6. 被引量:1

Basic Information:

DOI:

Chinese Library Classification Number:O472[理学—半导体物理]

Citation Information:

The BiFeO3/La0.5Gd0.17Sr0.33CoO3 heterojunction was prepared by pulsed laser deposition on the LaAlO3 substrate, and its optical and electrical properties were investigated. The results show that the La0.3Gd0.17Sr0.33CoO3 film,with a smooth and homogeneous surface, can provide favorable conditions for the growth of BiFeO3 film. At the temperature above 200 K,the BiFeO3/La0.5Gd0.17Sr0.33CoO3 heterojunc- tion shows semiconductor properties, and its resistance decreases with the increase of temperature. The optical band gap of the heterojunction is 3. 543 eV,so it has photo induced carriers generated by UV laser irradiation at room temperature.

quote

GB/T 7714-2015 [1] LIU Lin, REN Ren. Research on Optical and Electrical Properties of BiFeO_3 /La0.5Gd0.17Sr0.33CoO_3 Heterojunction[J]. Rare Metals and Cemented Carbides, 2013(6): 22-24.
MLA [1] LIU Lin, and REN Ren. "Research on Optical and Electrical Properties of BiFeO_3 /La0.5Gd0.17Sr0.33CoO_3 Heterojunction." Rare Metals and Cemented Carbides, no. 6, 2013, pp. 22-24.
APA [1] LIU Lin, & REN Ren. (2013). Research on Optical and Electrical Properties of BiFeO_3 /La0.5Gd0.17Sr0.33CoO_3 Heterojunction. Rare Metals and Cemented Carbides(6), 22-24.
IEEE [1] LIU Lin and REN Ren, "Research on Optical and Electrical Properties of BiFeO_3 /La0.5Gd0.17Sr0.33CoO_3 Heterojunction," Rare Metals and Cemented Carbides, no. 6, pp. 22-24, 2013. keywords: {BiFeO3/La0.5 Gd0.17 Sr0.33 CoO3;heterojunction;optical and electrical property;pulsed laser depos- ition method}